Part Details for MTD2955VT4 by onsemi
Results Overview of MTD2955VT4 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MTD2955VT4 Information
MTD2955VT4 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MTD2955VT4
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Bristol Electronics | 2142 |
|
RFQ | ||
|
Bristol Electronics | 964 |
|
RFQ | ||
|
Quest Components | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,12A I(D),TO-252AA | 6000 |
|
$0.3000 / $1.0000 | Buy Now |
|
ComSIT USA | Power Field-Effect Transistor, 12A I(D), 60V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
|
|
RFQ |
Part Details for MTD2955VT4
MTD2955VT4 CAD Models
MTD2955VT4 Part Data Attributes
|
MTD2955VT4
onsemi
Buy Now
Datasheet
|
Compare Parts:
MTD2955VT4
onsemi
Power MOSFET 60 V, 12 A, P Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
|
Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 369C | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 216 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.23 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 42 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for MTD2955VT4
This table gives cross-reference parts and alternative options found for MTD2955VT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD2955VT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
MTD2955V1G | onsemi | Check for Price | 12A, 60V, 0.23ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | MTD2955VT4 vs MTD2955V1G |
MTD2955V1 | onsemi | Check for Price | TRANSISTOR 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power | MTD2955VT4 vs MTD2955V1 |
MTD2955VT4 Frequently Asked Questions (FAQ)
-
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device is recommended. This helps to dissipate heat efficiently and reduce thermal resistance.
-
Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal interface material to reduce thermal resistance. Also, consider derating the device's power dissipation at high temperatures.
-
The maximum allowed voltage on the input pins is 5.5V. Exceeding this voltage may damage the device.
-
Use ESD protection devices such as TVS diodes or ESD arrays on the input pins. Also, follow proper handling and storage procedures to prevent ESD damage.
-
A 10nF to 100nF input capacitance is recommended to filter out high-frequency noise and ensure stable operation.