Datasheets
MRFE6VP6300HSR5 by:

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN

Part Details for MRFE6VP6300HSR5 by Freescale Semiconductor

Results Overview of MRFE6VP6300HSR5 by Freescale Semiconductor

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Applications Consumer Electronics Audio and Video Systems

MRFE6VP6300HSR5 Information

MRFE6VP6300HSR5 by Freescale Semiconductor is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for MRFE6VP6300HSR5

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MRFE6VP6300HSR5 Part Data Attributes

MRFE6VP6300HSR5 Freescale Semiconductor
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MRFE6VP6300HSR5 Freescale Semiconductor 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FREESCALE SEMICONDUCTOR INC
Package Description ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN
Pin Count 4
Manufacturer Package Code CASE 465H-02
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 130 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFP-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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