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Part Details for MRFE6VP61K25HSR5 by NXP Semiconductors
Results Overview of MRFE6VP61K25HSR5 by NXP Semiconductors
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
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Robotics and Drones
MRFE6VP61K25HSR5 Information
MRFE6VP61K25HSR5 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MRFE6VP61K25HSR5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
19T6332
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Newark | Rf Power Fet, N Channel, 125V 1250W, Ni-1230S, Drain Source Voltage Vds:125V, Continuous Drain Current Id:100Ma, Power Dissipation:1.333Kw, Operating Frequency Min:1.8Mhz, Operating Frequency Max:600Mhz, No. Of Pins:4Pins, Msl:- Rohs Compliant: Yes |Nxp MRFE6VP61K25HSR5 RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$197.4100 | Buy Now |
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DISTI #
568-15043-1-ND
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DigiKey | RF MOSFET LDMOS 50V NI1230 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
55 In Stock |
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$210.5416 / $262.4000 | Buy Now |
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DISTI #
MRFE6VP61K25HSR5
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Avnet Americas | Transistor RF FET N-CH 133V 1.8MHz to 600MHz 4-Pin NI-1230S-4S T/R - Tape and Reel (Alt: MRFE6VP61K25HSR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$189.5136 / $193.4618 | Buy Now |
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DISTI #
841-MRFE6VP61K25HSR5
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Mouser Electronics | RF MOSFET Transistors VHV6 1.25KW ISM NI1230HS RoHS: Compliant | 41 |
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$221.5800 / $254.6300 | Buy Now |
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DISTI #
V36:1790_07204233
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Arrow Electronics | Trans RF MOSFET N-CH 133V 4-Pin Case 375E-04 T/R RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks Date Code: 2409 | Americas - 1550 |
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$198.3900 | Buy Now |
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DISTI #
83141723
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Verical | Trans RF MOSFET N-CH 133V 4-Pin Case 375E-04 T/R RoHS: Compliant Min Qty: 50 Package Multiple: 50 Date Code: 2409 | Americas - 1550 |
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$198.3900 | Buy Now |
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DISTI #
65096519
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Verical | Trans RF MOSFET N-CH 133V 4-Pin Case 375E-04 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1902 | Americas - 20 |
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$252.2500 | Buy Now |
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DISTI #
MRFE6VP61K25HS5
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 20 |
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$208.0600 / $230.4200 | Buy Now |
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DISTI #
MRFE6VP61K25HSR5
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Avnet Silica | Transistor RF FET NCH 133V 18MHz to 600MHz 4Pin NI1230S4S TR (Alt: MRFE6VP61K25HSR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Cytech Systems Limited | RF MOSFET LDMOS 50V NI1230 | 50 |
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RFQ |
Part Details for MRFE6VP61K25HSR5
MRFE6VP61K25HSR5 CAD Models
MRFE6VP61K25HSR5 Part Data Attributes
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MRFE6VP61K25HSR5
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
MRFE6VP61K25HSR5
NXP Semiconductors
RF POWER, FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | NXP | |
| Case Connection | SOURCE | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 125 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Number of Elements | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1300 W | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
Alternate Parts for MRFE6VP61K25HSR5
This table gives cross-reference parts and alternative options found for MRFE6VP61K25HSR5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRFE6VP61K25HSR5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MRFE6VP61K25HSR6 | Freescale Semiconductor | Check for Price | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-1230S, CASE 375E-04, 4 PIN | MRFE6VP61K25HSR5 vs MRFE6VP61K25HSR6 |
| MRF6VP41KHSR6 | NXP Semiconductors | Check for Price | RF POWER, FET | MRFE6VP61K25HSR5 vs MRF6VP41KHSR6 |
| MRF6VP41KHR5 | NXP Semiconductors | Check for Price | RF POWER, FET | MRFE6VP61K25HSR5 vs MRF6VP41KHR5 |
MRFE6VP61K25HSR5 Frequently Asked Questions (FAQ)
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The MRFE6VP61K25HSR5 can operate from -40°C to 150°C, but the recommended operating temperature range is -20°C to 120°C for optimal performance.
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To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet. Typically, a voltage supply of 12-28V and a current of 100-500mA is recommended. Additionally, ensure the device is properly heat-sinked to prevent overheating.
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The MRFE6VP61K25HSR5 can handle up to 25W of continuous power and up to 50W of peak power. However, it's essential to follow the recommended power handling guidelines outlined in the datasheet to prevent device damage.
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To match the impedance of the MRFE6VP61K25HSR5 to your system, use a conjugate match technique. This involves designing an impedance matching network that presents a conjugate match to the device's output impedance. Consult the datasheet and application notes for more information.
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For optimal performance and thermal management, follow these guidelines: use a multi-layer PCB with a solid ground plane, keep the device away from heat sources, use thermal vias to dissipate heat, and ensure good airflow around the device. Consult the datasheet and application notes for more detailed guidelines.