Part Details for MRFE6VP5300GNR1 by NXP Semiconductors
Results Overview of MRFE6VP5300GNR1 by NXP Semiconductors
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
MRFE6VP5300GNR1 Information
MRFE6VP5300GNR1 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MRFE6VP5300GNR1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45X5014
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Newark | Wideband Rf Power Ldmos Transistor, 1.8-600 Mhz, 300 W Cw, 50 V/ Reel Rohs Compliant: Yes |Nxp MRFE6VP5300GNR1 RoHS: Compliant Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$55.8000 | Buy Now |
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DISTI #
MRFE6VP5300GNR1
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Avnet Americas | Transistor RF FET N-CH 133V 1.8MHz to 600MHz 4-Pin TO-270 T/R - Tape and Reel (Alt: MRFE6VP5300GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$48.1304 / $51.5379 | Buy Now |
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DISTI #
MRFE6VP5300GNR1
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Avnet Silica | Transistor RF FET NCH 133V 18MHz to 600MHz 4Pin TO270 TR (Alt: MRFE6VP5300GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 | Silica - 0 |
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Buy Now | |
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DISTI #
MRFE6VP5300GNR1
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EBV Elektronik | Transistor RF FET NCH 133V 18MHz to 600MHz 4Pin TO270 TR (Alt: MRFE6VP5300GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 | EBV - 0 |
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Buy Now |
Part Details for MRFE6VP5300GNR1
MRFE6VP5300GNR1 CAD Models
MRFE6VP5300GNR1 Part Data Attributes
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MRFE6VP5300GNR1
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
MRFE6VP5300GNR1
NXP Semiconductors
RF POWER, FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | NXP | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Peak Reflow Temperature (Cel) | 260 | |
| Terminal Finish | Tin (Sn) | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
MRFE6VP5300GNR1 Frequently Asked Questions (FAQ)
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NXP provides a recommended PCB layout in the application note AN1955, which includes guidelines for component placement, thermal management, and signal routing to ensure optimal performance and minimize thermal resistance.
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The biasing network should be optimized for the specific application and operating conditions. NXP recommends using the RF Power Amplifier Bias Calculator tool to determine the optimal biasing configuration for maximum efficiency. Additionally, the application note AN1987 provides guidelines for biasing network design.
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The maximum operating temperature for the MRFE6VP5300GNR1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and minimize thermal stress.
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NXP recommends following proper ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. Additionally, the device should be handled in a controlled environment with humidity and temperature control.
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NXP recommends following the soldering profile specified in the application note AN10365, which includes guidelines for temperature, time, and soldering techniques to ensure reliable assembly and minimize thermal stress.