MRF8P20140WHSR3 by:

2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET

Part Details for MRF8P20140WHSR3 by NXP Semiconductors

Results Overview of MRF8P20140WHSR3 by NXP Semiconductors

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Applications Consumer Electronics Audio and Video Systems

MRF8P20140WHSR3 Information

MRF8P20140WHSR3 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MRF8P20140WHSR3

Part # Distributor Description Stock Price Buy
DISTI # 85AK9245
Newark Single W-Cdma Lateral N-Channel Rf Power Mosfet, 1880-2025 Mhz, 24 W Avg., 28 V/Reel Rohs Compliant: Yes |Nxp MRF8P20140WHSR3 RoHS: Compliant Min Qty: 250 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $60.1400
$60.1400 Buy Now
Rochester Electronics Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 24 W Avg, 28 V RoHS: Compliant Status: Obsolete Min Qty: 1 250
  • 25 $66.2700
  • 100 $62.9600
  • 500 $59.6400
  • 1,000 $56.3300
  • 10,000 $53.0200
$53.0200 / $66.2700 Buy Now

Part Details for MRF8P20140WHSR3

MRF8P20140WHSR3 CAD Models

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MRF8P20140WHSR3 Part Data Attributes

MRF8P20140WHSR3 NXP Semiconductors
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MRF8P20140WHSR3 NXP Semiconductors 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00
Case Connection SOURCE
Configuration SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-CDFP-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 125 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for MRF8P20140WHSR3

This table gives cross-reference parts and alternative options found for MRF8P20140WHSR3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF8P20140WHSR3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MRF8P20140WHSR3 Freescale Semiconductor Check for Price 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN MRF8P20140WHSR3 vs MRF8P20140WHSR3
Part Number Manufacturer Composite Price Description Compare
MRF6S19100NBR1 Freescale Semiconductor Check for Price L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272, ROHS COMPLIANT, PLASTIC, CASE 1484-04, 4 PIN MRF8P20140WHSR3 vs MRF6S19100NBR1
MRF7S19170HR3 Freescale Semiconductor Check for Price L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN MRF8P20140WHSR3 vs MRF7S19170HR3
MRF6S18100NBR1 Freescale Semiconductor Check for Price L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272, ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN MRF8P20140WHSR3 vs MRF6S18100NBR1
MRF6S18060NBR1 Freescale Semiconductor Check for Price L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272, ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN MRF8P20140WHSR3 vs MRF6S18060NBR1
MRF6S19100HR3 NXP Semiconductors Check for Price L BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF8P20140WHSR3 vs MRF6S19100HR3
MRF8S19140HR3 NXP Semiconductors Check for Price L BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF8P20140WHSR3 vs MRF8S19140HR3
MRF7S18125BHR3 Freescale Semiconductor Check for Price L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN MRF8P20140WHSR3 vs MRF7S18125BHR3
MRF5S19060NBR1 NXP Semiconductors Check for Price RF POWER, FET MRF8P20140WHSR3 vs MRF5S19060NBR1
MRF5S19150S Motorola Mobility LLC Check for Price L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-880S, CASE 465C-02, 2 PIN MRF8P20140WHSR3 vs MRF5S19150S
MRF19045LSR3 Freescale Semiconductor Check for Price L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-400S, CASE 465F-04, 2 PIN MRF8P20140WHSR3 vs MRF19045LSR3

MRF8P20140WHSR3 Related Parts

MRF8P20140WHSR3 Frequently Asked Questions (FAQ)

  • NXP provides a recommended PCB layout in the application note AN1955, which includes guidelines for component placement, trace routing, and grounding to minimize noise and ensure optimal performance.

  • The MRF8P20140WHSR3 has several power-saving modes, including a low-power transmit mode and a shutdown mode. Refer to the device's programming guide for details on how to configure these modes to optimize power consumption for your specific application.

  • The MRF8P20140WHSR3 is rated for operation from -40°C to +125°C, but the maximum operating temperature range may vary depending on the specific application and use case. Consult the datasheet and NXP's reliability report for more information.

  • NXP provides a troubleshooting guide in the application note AN4031, which covers common issues and solutions related to RF performance, including impedance matching, noise reduction, and signal integrity.

  • NXP recommends using a low-dropout regulator (LDO) with a high power supply rejection ratio (PSRR) to ensure a stable power supply for the device. Consult the datasheet and NXP's application notes for specific component recommendations.

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