Part Details for MRF8P20140WHSR3 by NXP Semiconductors
Results Overview of MRF8P20140WHSR3 by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MRF8P20140WHSR3 Information
MRF8P20140WHSR3 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MRF8P20140WHSR3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85AK9245
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Newark | Single W-Cdma Lateral N-Channel Rf Power Mosfet, 1880-2025 Mhz, 24 W Avg., 28 V/Reel Rohs Compliant: Yes |Nxp MRF8P20140WHSR3 RoHS: Compliant Min Qty: 250 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$60.1400 | Buy Now |
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Rochester Electronics | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 24 W Avg, 28 V RoHS: Compliant Status: Obsolete Min Qty: 1 | 250 |
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$53.0200 / $66.2700 | Buy Now |
Part Details for MRF8P20140WHSR3
MRF8P20140WHSR3 CAD Models
MRF8P20140WHSR3 Part Data Attributes
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MRF8P20140WHSR3
NXP Semiconductors
Buy Now
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Compare Parts:
MRF8P20140WHSR3
NXP Semiconductors
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00 | |
Case Connection | SOURCE | |
Configuration | SEPARATE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 65 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | S BAND | |
JESD-30 Code | R-CDFP-F4 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 125 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLATPACK | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for MRF8P20140WHSR3
This table gives cross-reference parts and alternative options found for MRF8P20140WHSR3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF8P20140WHSR3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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MRF8P20140WHSR3 | Freescale Semiconductor | Check for Price | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN | MRF8P20140WHSR3 vs MRF8P20140WHSR3 |
MRF8P20140WHSR3 Frequently Asked Questions (FAQ)
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NXP provides a recommended PCB layout in the application note AN1955, which includes guidelines for component placement, trace routing, and grounding to minimize noise and ensure optimal performance.
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The MRF8P20140WHSR3 has several power-saving modes, including a low-power transmit mode and a shutdown mode. Refer to the device's programming guide for details on how to configure these modes to optimize power consumption for your specific application.
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The MRF8P20140WHSR3 is rated for operation from -40°C to +125°C, but the maximum operating temperature range may vary depending on the specific application and use case. Consult the datasheet and NXP's reliability report for more information.
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NXP provides a troubleshooting guide in the application note AN4031, which covers common issues and solutions related to RF performance, including impedance matching, noise reduction, and signal integrity.
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NXP recommends using a low-dropout regulator (LDO) with a high power supply rejection ratio (PSRR) to ensure a stable power supply for the device. Consult the datasheet and NXP's application notes for specific component recommendations.