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RF Power Field-Effect Transistor
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MRF300AN by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
568-13956-ND
|
DigiKey | RF MOSFET LDMOS 50V TO247 Min Qty: 1 Lead time: 10 Weeks Container: Tube |
88 In Stock |
|
$41.2899 / $56.8100 | Buy Now |
DISTI #
771-MRF300AN
|
Mouser Electronics | RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V RoHS: Compliant | 131 |
|
$41.2800 / $53.8900 | Buy Now |
DISTI #
V36:1790_21638048
|
Arrow Electronics | Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 10 Weeks Date Code: 2426 | Americas - 104 |
|
$39.4100 / $42.8800 | Buy Now |
DISTI #
83604240
|
Verical | Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 30 Package Multiple: 30 Date Code: 2426 | Americas - 90 |
|
$39.4100 / $42.8800 | Buy Now |
DISTI #
36459626
|
Verical | Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 2 Package Multiple: 1 | Americas - 32 |
|
$48.9500 | Buy Now |
DISTI #
82120116
|
Verical | Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2351 | Americas - 7 |
|
$40.7000 / $51.7000 | Buy Now |
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MRF300AN
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
MRF300AN
NXP Semiconductors
RF Power Field-Effect Transistor
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00 | |
Factory Lead Time | 53 Weeks, 3 Days | |
Samacsys Manufacturer | NXP | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 40 |
The MRF300AN is designed to operate up to 1000 MHz, making it suitable for a wide range of RF applications.
To optimize biasing, ensure that the gate voltage (Vgs) is set between -2V to -4V, and the drain voltage (Vds) is set between 10V to 28V. Additionally, adjust the quiescent current (Idq) to the recommended value of 100mA to 200mA.
To ensure optimal performance and thermal management, use a multi-layer PCB with a solid ground plane, and place thermal vias under the device. Also, ensure good heat sinking and airflow around the device.
To protect the MRF300AN from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded.
The recommended matching networks for the MRF300AN depend on the specific application and frequency range. However, a general guideline is to use a low-pass or band-pass filter topology with a series inductor and shunt capacitor at the input, and a parallel inductor and capacitor at the output.