Datasheets
MRF300AN by: NXP Semiconductors

RF Power Field-Effect Transistor

Part Details for MRF300AN by NXP Semiconductors

Results Overview of MRF300AN by NXP Semiconductors

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Applications Consumer Electronics

MRF300AN Information

MRF300AN by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MRF300AN

Part # Distributor Description Stock Price Buy
DISTI # 568-13956-ND
DigiKey RF MOSFET LDMOS 50V TO247 Min Qty: 1 Lead time: 10 Weeks Container: Tube 88
In Stock
  • 1 $56.8100
  • 10 $46.8180
  • 30 $43.8963
  • 120 $41.2899
$41.2899 / $56.8100 Buy Now
DISTI # 771-MRF300AN
Mouser Electronics RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V RoHS: Compliant 131
  • 1 $53.8900
  • 10 $45.5600
  • 30 $43.0700
  • 120 $41.2800
$41.2800 / $53.8900 Buy Now
DISTI # V36:1790_21638048
Arrow Electronics Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 10 Weeks Date Code: 2426 Americas - 104
  • 30 $42.8800
  • 120 $40.7200
  • 270 $39.4100
$39.4100 / $42.8800 Buy Now
DISTI # 83604240
Verical Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 30 Package Multiple: 30 Date Code: 2426 Americas - 90
  • 30 $42.8800
  • 120 $40.7200
  • 270 $39.4100
$39.4100 / $42.8800 Buy Now
DISTI # 36459626
Verical Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 2 Package Multiple: 1 Americas - 32
  • 2 $48.9500
$48.9500 Buy Now
DISTI # 82120116
Verical Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2351 Americas - 7
  • 1 $51.7000
  • 5 $40.7000
$40.7000 / $51.7000 Buy Now

Part Details for MRF300AN

MRF300AN CAD Models

MRF300AN Part Data Attributes

MRF300AN NXP Semiconductors
Buy Now Datasheet
Compare Parts:
MRF300AN NXP Semiconductors RF Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00
Factory Lead Time 53 Weeks, 3 Days
Samacsys Manufacturer NXP
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40

MRF300AN Frequently Asked Questions (FAQ)

  • The MRF300AN is designed to operate up to 1000 MHz, making it suitable for a wide range of RF applications.

  • To optimize biasing, ensure that the gate voltage (Vgs) is set between -2V to -4V, and the drain voltage (Vds) is set between 10V to 28V. Additionally, adjust the quiescent current (Idq) to the recommended value of 100mA to 200mA.

  • To ensure optimal performance and thermal management, use a multi-layer PCB with a solid ground plane, and place thermal vias under the device. Also, ensure good heat sinking and airflow around the device.

  • To protect the MRF300AN from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded.

  • The recommended matching networks for the MRF300AN depend on the specific application and frequency range. However, a general guideline is to use a low-pass or band-pass filter topology with a series inductor and shunt capacitor at the input, and a parallel inductor and capacitor at the output.

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