Part Details for MRF1535FNT1 by NXP Semiconductors
Results Overview of MRF1535FNT1 by NXP Semiconductors
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
MRF1535FNT1 Information
MRF1535FNT1 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MRF1535FNT1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
22M7857
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Newark | Lateral N-Channel Broadband Rf Power Mosfet, 520 Mhz, 35 W, 12.5 V Rohs Compliant: Yes |Nxp MRF1535FNT1 RoHS: Compliant Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
MRF1535FNT1
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Avnet Silica | Transistor RF FET NCH 40V 6A 135MHz to 520MHz 6Pin TO272 EP TR (Alt: MRF1535FNT1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 | Silica - 0 |
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Buy Now | |
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DISTI #
MRF1535FNT1
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EBV Elektronik | Transistor RF FET NCH 40V 6A 135MHz to 520MHz 6Pin TO272 EP TR (Alt: MRF1535FNT1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 | EBV - 0 |
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Buy Now |
Part Details for MRF1535FNT1
MRF1535FNT1 CAD Models
MRF1535FNT1 Part Data Attributes
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MRF1535FNT1
NXP Semiconductors
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Compare Parts:
MRF1535FNT1
NXP Semiconductors
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272BA
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | ROHS COMPLIANT, PLASTIC, CASE 1264A-03, 6 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Samacsys Manufacturer | NXP | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 6 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JEDEC-95 Code | TO-272BA | |
| JESD-30 Code | R-PDFM-F6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 135 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MRF1535FNT1
This table gives cross-reference parts and alternative options found for MRF1535FNT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF1535FNT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MRF1535FT1 | Motorola Mobility LLC | Check for Price | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272, PLASTIC, TO-272, CASE 1264A-02, 6 PIN | MRF1535FNT1 vs MRF1535FT1 |
MRF1535FNT1 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces as short as possible and use 50-ohm microstrip lines. Avoid vias and thermal pads under the device.
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Use a bias tee or a separate bias supply to ensure a stable voltage supply. Adjust the bias voltage to achieve the optimal quiescent current (typically around 100-150 mA). Monitor the device's temperature and adjust the bias accordingly.
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The MRF1535FNT1 can handle up to 5W of continuous wave (CW) power. However, it's recommended to derate the power handling capability based on the operating frequency, duty cycle, and environmental conditions.
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Use a network analyzer to measure the device's input and output impedance. Then, design a matching network using lumped elements or transmission lines to achieve a conjugate match. Verify the match using simulation tools or measurements.
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The MRF1535FNT1 has a thermal resistance of 12°C/W. Ensure good thermal contact between the device and the heat sink. Use a thermal interface material and a heat sink with a thermal resistance of <1°C/W. Monitor the device's temperature and adjust the thermal design accordingly.