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Part Details for MRF101BN by NXP Semiconductors
Results Overview of MRF101BN by NXP Semiconductors
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
MRF101BN Information
MRF101BN by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MRF101BN
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85AC2015
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Newark | Rf Fet Transistor, 133V, 182W, To-220, Drain Source Voltage Vds:133V, Continuous Drain Current Id:-, Power Dissipation Pd:182W, Operating Frequency Min:1.8Mhz, Operating Frequency Max:250Mhz, Rf Transistor Case:To-220, No. Of Rohs Compliant: Yes |Nxp MRF101BN RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 400 |
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$15.9200 / $24.2300 | Buy Now |
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DISTI #
568-14752-ND
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DigiKey | RF MOSFET LDMOS 50V TO220-3 Min Qty: 1 Lead time: 10 Weeks Container: Tube |
180 In Stock |
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$16.2938 / $24.7200 | Buy Now |
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DISTI #
MRF101BN
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Avnet Americas | Transistor RF FET N-CH 133V 3-Pin TO-220 Tube - Rail/Tube (Alt: MRF101BN) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$13.5620 / $15.9413 | Buy Now |
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DISTI #
771-MRF101BN
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Mouser Electronics | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V RoHS: Not Compliant | 210 |
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$15.9500 / $24.7200 | Buy Now |
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DISTI #
V36:1790_22597629
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Arrow Electronics | Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220 Tube Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks Date Code: 2348 | Americas - 35 |
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$15.5900 / $17.6900 | Buy Now |
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DISTI #
MRF101BN
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Not Compliant Min Qty: 250 | 0 |
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$16.5500 | Buy Now |
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DISTI #
MRF101BN
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Avnet Silica | Transistor RF FET NCH 133V 3Pin TO220 Tube (Alt: MRF101BN) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
MRF101BN
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EBV Elektronik | Transistor RF FET NCH 133V 3Pin TO220 Tube (Alt: MRF101BN) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks, 0 Days | EBV - 400 |
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Buy Now |
Part Details for MRF101BN
MRF101BN CAD Models
MRF101BN Part Data Attributes
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MRF101BN
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
MRF101BN
NXP Semiconductors
RF Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Factory Lead Time | 10 Weeks | |
| Date Of Intro | 2018-11-01 | |
| Samacsys Manufacturer | NXP | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
MRF101BN Frequently Asked Questions (FAQ)
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The maximum power dissipation of the MRF101BN is 1.5 W. However, it's recommended to derate the power dissipation based on the operating temperature and other factors to ensure reliable operation.
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To minimize thermal resistance, it's recommended to use a thermal pad on the bottom of the package, and to connect it to a large copper area on the PCB. Additionally, using thermal vias and a thermal plane can help to dissipate heat more efficiently.
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The recommended operating voltage range for the MRF101BN is 12.5 V to 28 V. However, the device can operate up to 32 V, but with reduced performance and reliability.
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To protect the MRF101BN from ESD, it's recommended to use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins. Additionally, handling the device with ESD-safe materials and following proper ESD handling procedures can help prevent damage.
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The maximum operating frequency of the MRF101BN is 1000 MHz. However, the device can operate up to 1200 MHz with reduced performance and reliability.