Part Details for MMRF1304GNR1 by NXP Semiconductors
Results Overview of MMRF1304GNR1 by NXP Semiconductors
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
MMRF1304GNR1 Information
MMRF1304GNR1 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMRF1304GNR1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45X4977
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Newark | Wideband Rf Power Ldmos Transistor, 1.8 - 2000 Mhz, 25 W, 50 V/ Reel Rohs Compliant: Yes |Nxp MMRF1304GNR1 RoHS: Compliant Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$31.0900 | Buy Now |
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DISTI #
MMRF1304GNR1
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Avnet Americas | Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin TO-270 T/R - Tape and Reel (Alt: MMRF1304GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$25.8285 / $27.6571 | Buy Now |
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DISTI #
V72:2272_07194772
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Arrow Electronics | Trans RF MOSFET N-CH 133V 3-Pin TO-270 GULL T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2004 Container: Cut Strips | Americas - 82 |
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$22.8100 / $26.9000 | Buy Now |
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DISTI #
25968515
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Verical | Trans RF MOSFET N-CH 133V 3-Pin TO-270 GULL T/R Min Qty: 1 Package Multiple: 1 Date Code: 1448 | Americas - 475 |
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$20.5600 | Buy Now |
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DISTI #
33978542
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Verical | Trans RF MOSFET N-CH 133V 3-Pin TO-270 GULL T/R Min Qty: 2 Package Multiple: 1 Date Code: 1448 | Americas - 85 |
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$38.1000 | Buy Now |
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DISTI #
57211818
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Verical | Trans RF MOSFET N-CH 133V 3-Pin TO-270 GULL T/R Min Qty: 1 Package Multiple: 1 Date Code: 2004 | Americas - 82 |
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$22.8100 / $26.9000 | Buy Now |
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DISTI #
MMRF1304GNR1
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 85 |
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$33.3000 / $37.0100 | Buy Now |
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DISTI #
MMRF1304GNR1
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Avnet Silica | Transistor RF FET NCH 133V 18MHz to 2000MHz 2Pin TO270 TR (Alt: MMRF1304GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 | Silica - 0 |
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Buy Now | |
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Cytech Systems Limited | RF MOSFET LDMOS 50V TO270-2 | 125 |
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RFQ | |
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DISTI #
MMRF1304GNR1
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EBV Elektronik | Transistor RF FET NCH 133V 18MHz to 2000MHz 2Pin TO270 TR (Alt: MMRF1304GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 | EBV - 0 |
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Buy Now |
Part Details for MMRF1304GNR1
MMRF1304GNR1 CAD Models
MMRF1304GNR1 Part Data Attributes
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MMRF1304GNR1
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
MMRF1304GNR1
NXP Semiconductors
RF POWER, FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | NXP | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 133 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.26 pF | |
| Highest Frequency Band | L BAND | |
| JEDEC-95 Code | TO-270BA | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 24 dB | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
MMRF1304GNR1 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces as short as possible and use 50-ohm microstrip lines. Avoid vias and thermal pads under the device.
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Use a voltage-controlled biasing scheme with a voltage regulator to maintain a stable voltage supply. Adjust the bias voltage to optimize the device's efficiency, typically between 3.5V to 4.5V.
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Use a heat sink with a thermal interface material (TIM) to dissipate heat. Ensure good airflow around the device and avoid blocking the airflow with nearby components.
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Check the PCB layout, biasing, and power supply for any issues. Verify the device is properly soldered and there are no signs of damage. Use a spectrum analyzer to measure the output signal and identify any spurious emissions.
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Yes, the MMRF1304GNR1 can be used in a push-pull configuration to achieve higher power output. However, ensure proper impedance matching and biasing to avoid oscillations and instability.