Part Details for MMFTN123 by Diotec Semiconductor AG
Results Overview of MMFTN123 by Diotec Semiconductor AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
MMFTN123 Information
MMFTN123 by Diotec Semiconductor AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMFTN123
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
4878-MMFTN123CT-ND
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DigiKey | MOSFET N-CH 100V 170MA SOT23-3 Min Qty: 1 Lead time: 2 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
8970 In Stock |
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$0.0276 / $0.1700 | Buy Now |
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DISTI #
637-MMFTN123
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Mouser Electronics | MOSFETs MOSFET, SOT-23, 100V, 0.17A, 150C, N RoHS: Compliant | 8601 |
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$0.0450 / $0.2600 | Buy Now |
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DISTI #
E02:0323_06675333
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Arrow Electronics | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 9000 Package Multiple: 3000 Lead time: 8 Weeks | Europe - 9000 |
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$0.0279 / $0.0342 | Buy Now |
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Onlinecomponents.com | MOSFET - SOT-23 - 100V - 0.17A - N - 0.36W RoHS: Compliant | 777000 Factory Stock |
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$0.0240 / $0.0319 | Buy Now |
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DISTI #
80940409
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Verical | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 9000 Package Multiple: 9000 | Americas - 9000 |
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$0.0451 | Buy Now |
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DISTI #
88080422
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Verical | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1800 Package Multiple: 50 | Americas - 4800 |
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$0.0378 / $0.0472 | Buy Now |
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DISTI #
87347504
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Verical | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1241 Package Multiple: 1 | Americas - 2568 |
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$0.0416 / $0.0564 | Buy Now |
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DISTI #
MMFTN123-DIO
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TME | Transistor: N-MOSFET, unipolar, 100V, 0.17A, 0.36W, SOT23 Min Qty: 10 | 2700 |
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$0.0302 / $0.0754 | Buy Now |
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Master Electronics | MOSFET - SOT-23 - 100V - 0.17A - N - 0.36W RoHS: Compliant | 777000 Factory Stock |
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$0.0240 / $0.0319 | Buy Now |
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New Advantage Corporation | Mosfet N-channel 0,17A/100V 0,36W SOT-23 RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 3890 |
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$0.0533 | Buy Now |
Part Details for MMFTN123
MMFTN123 CAD Models
MMFTN123 Part Data Attributes
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MMFTN123
Diotec Semiconductor AG
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Datasheet
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MMFTN123
Diotec Semiconductor AG
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIOTEC SEMICONDUCTOR AG | |
| Part Package Code | SOT-23 | |
| Package Description | ROHS COMPLIANT, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Diotec | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 10 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Element Material | SILICON |
MMFTN123 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the MMFTN123 is a pad size of 2.5mm x 2.5mm with a thermal pad size of 5mm x 5mm, and a solder mask opening of 3.5mm x 3.5mm.
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To ensure proper cooling, a heat sink with a thermal resistance of ≤ 10°C/W is recommended. Additionally, apply a thin layer of thermal interface material (TIM) between the MOSFET and heat sink.
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The maximum allowed power dissipation for the MMFTN123 is 150W at a case temperature of 25°C. However, this value can be derated based on the ambient temperature and heat sink used.
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Yes, the MMFTN123 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the gate drive circuitry is designed to minimize ringing and overshoot.
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Handle the MMFTN123 with ESD-protective equipment and follow proper ESD-handling procedures. Additionally, ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD-protection arrays.