Part Details for MMBTH10LT1G by onsemi
Results Overview of MMBTH10LT1G by onsemi
- Distributor Offerings: (35 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
MMBTH10LT1G Information
MMBTH10LT1G by onsemi is an RF Small Signal Bipolar Transistor.
RF Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMBTH10LT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
98H0745
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Newark | Bipolar Transistor, Npn, 25V, Transistor Polarity:Npn, Collector Emitter Voltage Max:25V, Transition Frequency:650Mhz, Power Dissipation:225Mw, Continuous Collector Current:4Ma, No. Of Pins:3Pins, Dc Current Gain Hfe Min:60Hfe Rohs Compliant: Yes |Onsemi MMBTH10LT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 9331 |
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$0.0370 | Buy Now |
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DISTI #
29X6101
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Newark | Transistor, Npn, 25V, Sot-23-3, Transistor Polarity:Npn, Collector Emitter Voltage Max:25V, Transition Frequency:650Mhz, Power Dissipation:225Mw, Continuous Collector Current:4Ma, No. Of Pins:3Pins, Dc Current Gain Hfe Min:60Hfe Rohs Compliant: Yes |Onsemi MMBTH10LT1G RoHS: Compliant Min Qty: 21000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0320 / $0.0390 | Buy Now |
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DISTI #
MMBTH10LT1GOSCT-ND
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DigiKey | RF TRANS NPN 25V 650MHZ SOT-23-3 Min Qty: 1 Lead time: 9 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
85237 In Stock |
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$0.0266 / $0.1000 | Buy Now |
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DISTI #
98H0745
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Avnet Americas | Trans GP BJT NPN 25V 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 98H0745) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 27 Weeks, 4 Days Container: Ammo Pack | 9331 Partner Stock |
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$0.0650 / $0.2410 | Buy Now |
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DISTI #
863-MMBTH10LT1G
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Mouser Electronics | Bipolar Transistors - BJT 25V VHF Mixer NPN RoHS: Compliant | 15686 |
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$0.0290 / $0.1000 | Buy Now |
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DISTI #
V36:1790_07318349
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Arrow Electronics | Trans RF BJT NPN 25V 300mW 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Date Code: 2430 | Americas - 144000 |
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$0.0244 / $0.0380 | Buy Now |
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DISTI #
V72:2272_07318349
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Arrow Electronics | Trans RF BJT NPN 25V 300mW 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2143 Container: Cut Strips | Americas - 18439 |
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$0.0384 / $0.0560 | Buy Now |
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DISTI #
E02:0323_00018602
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Arrow Electronics | Trans RF BJT NPN 25V 300mW 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Date Code: 2444 | Europe - 15000 |
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$0.0274 / $0.0427 | Buy Now |
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DISTI #
70340293
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RS | ON Semi MMBTH10LT1G NPN RF Bipolar Transistor, 0.004 A, 25 V, 3-Pin SOT-23 Min Qty: 100 Package Multiple: 1 Container: Bulk | 0 |
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$0.0810 / $0.0950 | RFQ |
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Future Electronics | MMBTH Series 25 V 100 nA Surface Mount NPN Silicon VHF/UHF Transistor - SOT-23 RoHS: Not Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Container: Reel | 117000Reel |
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$0.0256 / $0.0276 | Buy Now |
Part Details for MMBTH10LT1G
MMBTH10LT1G CAD Models
MMBTH10LT1G Part Data Attributes
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MMBTH10LT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
MMBTH10LT1G
onsemi
NPN Bipolar Transistor hFE ≥ 60; fT ≥ 650 MHz, SOT-23 (TO-236) 3 LEAD, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-23 (TO-236) 3 LEAD | |
| Package Description | CASE 318-08, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 318 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Factory Lead Time | 27 Weeks, 4 Days | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 0.025 A | |
| Collector-Base Capacitance-Max | 0.7 pF | |
| Collector-Emitter Voltage-Max | 25 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 60 | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 650 MHz |
Alternate Parts for MMBTH10LT1G
This table gives cross-reference parts and alternative options found for MMBTH10LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBTH10LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MMBTH10D87Z | Fairchild Semiconductor Corporation | Check for Price | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | MMBTH10LT1G vs MMBTH10D87Z |
| MMBTH10 | Texas Instruments | Check for Price | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB | MMBTH10LT1G vs MMBTH10 |
| BFU530A | NXP Semiconductors | Check for Price | TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | MMBTH10LT1G vs BFU530A |
| MMBTH10-13 | Diodes Incorporated | Check for Price | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC PACKAGE-3 | MMBTH10LT1G vs MMBTH10-13 |
| MMBTH10 | Micro Commercial Components | Check for Price | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC PACKAGE-3 | MMBTH10LT1G vs MMBTH10 |
| MMBTH10 | onsemi | Check for Price | NPN RF Transistor, SOT-23-3, 3000-REEL | MMBTH10LT1G vs MMBTH10 |
MMBTH10LT1G Frequently Asked Questions (FAQ)
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The recommended operating voltage range for the MMBTH10LT1G is 10V to 30V, with a maximum voltage rating of 40V.
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To ensure proper biasing, the MMBTH10LT1G requires a base-emitter voltage (VBE) of around 0.7V to 1.0V, and a collector-emitter voltage (VCE) of at least 1V to 2V.
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The MMBTH10LT1G has a maximum collector current (IC) rating of 1A, and a maximum peak current rating of 2A.
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To prevent overheating, ensure the MMBTH10LT1G is mounted on a suitable heat sink, and maintain a maximum junction temperature (TJ) of 150°C.
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Yes, the MMBTH10LT1G can be used in switching applications, but ensure the switching frequency is within the recommended range of 100 kHz to 1 MHz, and the device is properly biased and heat-sinked.