Part Details for MMBT5550LT1 by onsemi
Results Overview of MMBT5550LT1 by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
MMBT5550LT1 Information
MMBT5550LT1 by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMBT5550LT1
| Part # | Distributor | Description | Stock | Price | Buy | |
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MMBT5550LT1
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Avnet Americas | - Tape and Reel (Alt: MMBT5550LT1) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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Bristol Electronics | 8778 |
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Bristol Electronics | Min Qty: 56 | 2720 |
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$0.0270 / $0.0900 | Buy Now |
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Bristol Electronics | 2509 |
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Bristol Electronics | 2330 |
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Bristol Electronics | 2257 |
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Quest Components | TRANSISTOR,BJT,NPN,140V V(BR)CEO,600MA I(C),SOT-23 | 2184 |
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$0.0336 / $0.1680 | Buy Now |
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Quest Components | TRANSISTOR,BJT,NPN,140V V(BR)CEO,600MA I(C),SOT-23 | 2176 |
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$0.0240 / $0.1200 | Buy Now |
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Quest Components | TRANSISTOR,BJT,NPN,140V V(BR)CEO,600MA I(C),SOT-23 | 2007 |
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$0.0504 / $0.1680 | Buy Now |
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Quest Components | TRANSISTOR,BJT,NPN,140V V(BR)CEO,600MA I(C),SOT-23 | 1864 |
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$0.0900 / $0.3000 | Buy Now |
Part Details for MMBT5550LT1
MMBT5550LT1 CAD Models
MMBT5550LT1 Part Data Attributes
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MMBT5550LT1
onsemi
Buy Now
Datasheet
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Compare Parts:
MMBT5550LT1
onsemi
High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-23 | |
| Package Description | CASE 318-08, TO-236, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 318-08 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 0.06 A | |
| Collector-Emitter Voltage-Max | 140 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 20 | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.225 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 200 MHz |
Alternate Parts for MMBT5550LT1
This table gives cross-reference parts and alternative options found for MMBT5550LT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT5550LT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MMBT5550LT1G | onsemi | $0.0234 | High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL | MMBT5550LT1 vs MMBT5550LT1G |
| MMBT5550LT1 | Rectron Semiconductor | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 | MMBT5550LT1 vs MMBT5550LT1 |
| MMBT5551LT1 | Rochester Electronics LLC | Check for Price | 60mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN | MMBT5550LT1 vs MMBT5551LT1 |
| MMBT5551LT3 | Motorola Semiconductor Products | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | MMBT5550LT1 vs MMBT5551LT3 |
| MMBT5551LT3 | Motorola Mobility LLC | Check for Price | 600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | MMBT5550LT1 vs MMBT5551LT3 |
| MMBT5551LT1 | Motorola Mobility LLC | Check for Price | 600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | MMBT5550LT1 vs MMBT5551LT1 |
MMBT5550LT1 Frequently Asked Questions (FAQ)
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The recommended PCB layout for MMBT5550LT1 is to use a thermal pad with a minimum size of 2mm x 2mm, and to connect it to a large copper area on the PCB to dissipate heat efficiently. Additionally, it is recommended to use a via array under the thermal pad to further reduce thermal resistance.
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To ensure the reliability of MMBT5550LT1 in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to ensure that the device is operated within its recommended operating conditions. Additionally, it is recommended to use a heat sink or thermal management system to keep the device temperature below 150°C.
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The maximum allowable voltage for MMBT5550LT1 is 160V, which is the absolute maximum rating. However, it is recommended to operate the device at a voltage below 120V to ensure reliable operation and to prevent damage to the device.
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To handle ESD protection for MMBT5550LT1, it is recommended to follow proper ESD handling procedures during assembly and testing, such as using ESD-safe materials and equipment, and ensuring that the device is properly grounded. Additionally, it is recommended to use ESD protection devices, such as TVS diodes, in the circuit design to protect the device from ESD events.
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The recommended storage temperature range for MMBT5550LT1 is -40°C to 150°C. It is recommended to store the devices in a dry, cool place, away from direct sunlight and moisture.