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3.0 A, 40 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MJD31T4G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
09R9438
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Newark | Bipolar Transistor, Npn, 40V, D-Pak, Transistor Polarity:Npn, Pnp, Collector Emitter Voltage Max:40V, Continuous Collector Current:3A, Power Dissipation:15W, Transistor Mounting:Surface Mount, No. Of Pins:3Pins, Qualification:- Rohs Compliant: Yes |Onsemi MJD31T4G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 250 |
|
$0.0530 | Buy Now |
DISTI #
71J5849
|
Newark | Bipolar Transistor, Npn, 40V, D-Pak, Full Reel, Transistor Polarity:Npn, Collector Emitter Voltage Max:40V, Continuous Collector Current:3A, Power Dissipation:15W, Transistor Mounting:Surface Mount, No. Of Pins:3Pins, Product Range:-Rohs Compliant: Yes |Onsemi MJD31T4G RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.3380 / $0.4500 | Buy Now |
DISTI #
MJD31T4GOSCT-ND
|
DigiKey | TRANS NPN 40V 3A DPAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3224 In Stock |
|
$0.3720 / $1.5600 | Buy Now |
DISTI #
09R9438
|
Avnet Americas | Bipolar (BJT) Single Transistor, NPN, 40 V, 3 A, 15 W, TO-252 (DPAK), Surface Mount - Product that comes on tape, but is not reeled (Alt: 09R9438) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 51 Weeks, 0 Days Container: Ammo Pack | 250 Partner Stock |
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$0.4690 | Buy Now |
DISTI #
MJD31T4G
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Avnet Americas | Bipolar (BJT) Single Transistor, NPN, 40 V, 3 A, 15 W, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: MJD31T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.2906 / $0.3353 | Buy Now |
DISTI #
863-MJD31T4G
|
Mouser Electronics | Bipolar Transistors - BJT 3A 40V 15W NPN RoHS: Compliant | 2316 |
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$0.3480 / $1.0900 | Buy Now |
DISTI #
V79:2366_28988826
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Arrow Electronics | Trans GP BJT NPN 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Date Code: 2243 | Americas - 4985 |
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$0.2531 / $0.3989 | Buy Now |
DISTI #
V72:2272_07322542
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Arrow Electronics | Trans GP BJT NPN 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2349 Container: Cut Strips | Americas - 473 |
|
$0.4029 / $0.5900 | Buy Now |
DISTI #
70466684
|
RS | ON Semi MJD31T4G NPN Bipolar Transistor, 3 A, 40 V, 3-Pin DPAK Min Qty: 100 Package Multiple: 1 Container: Bulk | 0 |
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$0.6300 / $0.7500 | RFQ |
|
Onlinecomponents.com | 3.0 A, 40 V NPN Bipolar Power Transistor RoHS: Compliant | 0 |
|
$0.3116 / $0.3396 | Buy Now |
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MJD31T4G
onsemi
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Datasheet
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MJD31T4G
onsemi
3.0 A, 40 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 369C | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 51 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 3 A | |
Collector-Emitter Voltage-Max | 40 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 15 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 3 MHz |
This table gives cross-reference parts and alternative options found for MJD31T4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD31T4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
MJD31T4 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD31T4G vs MJD31T4 |
A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Use a heat sink or thermal pad to maintain a safe junction temperature, and avoid overheating the device.
The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins. Handle the device by the body or use an anti-static wrist strap to prevent ESD damage during handling.
A gate drive voltage of 10-15V is recommended for optimal switching performance. However, the device can operate with a gate drive voltage as low as 5V, but with reduced switching performance.