Part Details for M29W160FT70N3E by Micron Technology Inc
Results Overview of M29W160FT70N3E by Micron Technology Inc
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
M29W160FT70N3E Information
M29W160FT70N3E by Micron Technology Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for M29W160FT70N3E
M29W160FT70N3E CAD Models
M29W160FT70N3E Part Data Attributes
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M29W160FT70N3E
Micron Technology Inc
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Datasheet
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M29W160FT70N3E
Micron Technology Inc
Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Package Description | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Access Time-Max | 70 ns | |
| Additional Feature | TOP BOOT BLOCK | |
| Alternate Memory Width | 8 | |
| Boot Block | TOP | |
| Command User Interface | YES | |
| Common Flash Interface | YES | |
| Data Polling | YES | |
| JESD-30 Code | R-PDSO-G48 | |
| JESD-609 Code | e3 | |
| Length | 18.4 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 1,2,1,31 | |
| Number of Terminals | 48 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 1MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP48,.8,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Parallel/Serial | PARALLEL | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Screening Level | AEC-Q100 | |
| Seated Height-Max | 1.2 mm | |
| Sector Size | 16K,8K,32K,64K | |
| Standby Current-Max | 0.0001 A | |
| Supply Current-Max | 0.02 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | AUTOMOTIVE | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Toggle Bit | YES | |
| Type | NOR TYPE | |
| Width | 12 mm |
M29W160FT70N3E Frequently Asked Questions (FAQ)
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The M29W160FT70N3E has an operating temperature range of -40°C to +85°C.
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The HOLD# signal should be asserted low to pause the current operation, and de-asserted high to resume the operation. Note that HOLD# should not be asserted during a write operation, as it may cause data corruption.
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The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal. This ensures proper device initialization and prevents latch-up conditions.
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The M29W160FT70N3E is a 16Mbit (2M x 8-bit) flash memory device, organized as 2048 sectors of 8192 bytes each.
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The WP# signal is used to protect the entire device or specific sectors from write operations. When WP# is asserted low, the device or selected sectors are write-protected.