Part Details for JANTXV2N6756 by Motorola Mobility LLC
Results Overview of JANTXV2N6756 by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
JANTXV2N6756 Information
JANTXV2N6756 by Motorola Mobility LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTXV2N6756
JANTXV2N6756 CAD Models
JANTXV2N6756 Part Data Attributes
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JANTXV2N6756
Motorola Mobility LLC
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Datasheet
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JANTXV2N6756
Motorola Mobility LLC
14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 150 pF | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MILITARY STANDARD (USA) | |
| Surface Mount | NO | |
| Terminal Finish | NOT SPECIFIED | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 85 ns | |
| Turn-on Time-Max (ton) | 105 ns |
Alternate Parts for JANTXV2N6756
This table gives cross-reference parts and alternative options found for JANTXV2N6756. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6756, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTXV2N6756 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | JANTXV2N6756 vs JANTXV2N6756 |
| IRF131 | Rochester Electronics LLC | Check for Price | 14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | JANTXV2N6756 vs IRF131 |
| JANTX2N6756 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN | JANTXV2N6756 vs JANTX2N6756 |
| JANTXV2N6756 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | JANTXV2N6756 vs JANTXV2N6756 |
| IRF130-JQR-B | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 45A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | JANTXV2N6756 vs IRF130-JQR-B |
| IRF130 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 45A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | JANTXV2N6756 vs IRF130 |
| IRF131 | Intersil Corporation | Check for Price | 14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | JANTXV2N6756 vs IRF131 |
| IRF131 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | JANTXV2N6756 vs IRF131 |
| 2N6756 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | JANTXV2N6756 vs 2N6756 |
| JAN2N6756 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | JANTXV2N6756 vs JAN2N6756 |