Part Details for JANTXV2N6298 by New England Semiconductor
Results Overview of JANTXV2N6298 by New England Semiconductor
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANTXV2N6298 Information
JANTXV2N6298 by New England Semiconductor is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTXV2N6298
JANTXV2N6298 CAD Models
JANTXV2N6298 Part Data Attributes
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JANTXV2N6298
New England Semiconductor
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Datasheet
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JANTXV2N6298
New England Semiconductor
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, TO-213AA, 2 PIN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
Package Description | TO-213AA, 2 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 8 A | |
Collector-Base Capacitance-Max | 300 pF | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | DARLINGTON | |
DC Current Gain-Min (hFE) | 750 | |
JEDEC-95 Code | TO-213AA | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 75 W | |
Qualification Status | Not Qualified | |
Reference Standard | MIL | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 4 MHz | |
VCEsat-Max | 2 V |