| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| International Rectifier | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN |
|
View Details | |
| Microsemi Corporation | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U-PKG-3 |
|
View Details | |
| Defense Logistics Agency | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN |
|
View Details | |
| Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN |
|
View Details |