Part Details for JANSR2N7389U by Microsemi Corporation
Results Overview of JANSR2N7389U by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSR2N7389U Information
JANSR2N7389U by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANSR2N7389U
JANSR2N7389U CAD Models
JANSR2N7389U Part Data Attributes
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JANSR2N7389U
Microsemi Corporation
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Datasheet
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JANSR2N7389U
Microsemi Corporation
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LCC-18
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | LCC | |
| Package Description | ROHS COMPLIANT, LCC-18 | |
| Pin Count | 18 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.35 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XQCC-N15 | |
| JESD-609 Code | e4 | |
| Number of Elements | 1 | |
| Number of Terminals | 15 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | P-CHANNEL | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/630 | |
| Surface Mount | YES | |
| Terminal Finish | GOLD OVER NICKEL | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Transistor Element Material | SILICON |
Alternate Parts for JANSR2N7389U
This table gives cross-reference parts and alternative options found for JANSR2N7389U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSR2N7389U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRHE93130 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18 | JANSR2N7389U vs IRHE93130 |
JANSR2N7389U Frequently Asked Questions (FAQ)
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Microsemi recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat. A minimum of 2 oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves for voltage and current. Additionally, consider using a heat sink or thermal management system to keep the junction temperature below the maximum rated value.
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The JANSR2N7389U is a sensitive device and requires proper ESD protection during handling and assembly. Use ESD-safe materials, follow proper grounding procedures, and handle the device by the body or pins to prevent damage.
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The JANSR2N7389U is designed to meet the requirements of MIL-PRF-19500, which includes radiation hardness. However, it's essential to consult with Microsemi's radiation hardness assurance team to ensure the device meets the specific requirements of your application.
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Microsemi recommends using a controlled atmosphere soldering process with a peak temperature of 260°C (500°F) to prevent damage to the device. Follow the recommended soldering profile and use a solder with a melting point above 180°C (356°F).