Part Details for JANSG2N7431D by Defense Logistics Agency
Results Overview of JANSG2N7431D by Defense Logistics Agency
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- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSG2N7431D Information
JANSG2N7431D by Defense Logistics Agency is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANSG2N7431D
JANSG2N7431D CAD Models
JANSG2N7431D Part Data Attributes
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JANSG2N7431D
Defense Logistics Agency
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JANSG2N7431D
Defense Logistics Agency
Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | DEFENSE LOGISTICS AGENCY | |
Package Description | HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN | |
Reach Compliance Code | unknown | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.021 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-CSFM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 284 A | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-19500/663 | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |