-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXTY08N50D2 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
03AH1903
|
Newark | Mosfet, N-Ch, 500V, 800Ma, 150Deg C, 60W, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:800Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:0V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTY08N50D2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1015 |
|
$1.1800 / $1.7600 | Buy Now |
DISTI #
IXTY08N50D2-ND
|
DigiKey | MOSFET N-CH 500V 800MA TO252 Min Qty: 1 Lead time: 24 Weeks Container: Tube |
15122 In Stock |
|
$1.2060 / $2.9700 | Buy Now |
DISTI #
V36:1790_15876758
|
Arrow Electronics | Trans MOSFET N-CH 500V 0.8A 3-Pin(2+Tab) DPAK RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 36 Weeks Date Code: 2441 | Americas - 280 |
|
$1.1780 / $2.0870 | Buy Now |
DISTI #
87744345
|
Verical | Trans MOSFET N-CH 500V 0.8A 3-Pin(2+Tab) DPAK RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 2441 | Americas - 280 |
|
$1.1780 / $2.0870 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IXTY08N50D2
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXTY08N50D2
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Drain-source On Resistance-Max | 4.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 11 pF | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
The recommended PCB footprint for the IXTY08N50D2 is a TO-252 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the PCB pads. Use a soldering technique that minimizes the risk of overheating the component.
The maximum allowed voltage transient for the IXTY08N50D2 is 650V, as specified in the datasheet. Exceeding this voltage may damage the component.
The IXTY08N50D2 is rated for operation up to 150°C. However, it's recommended to derate the component's power handling capability at high temperatures to ensure reliable operation.
To calculate the power dissipation of the IXTY08N50D2, use the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.