Datasheets
IXTY08N50D2 by:

Power Field-Effect Transistor,

Part Details for IXTY08N50D2 by Littelfuse Inc

Results Overview of IXTY08N50D2 by Littelfuse Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IXTY08N50D2 Information

IXTY08N50D2 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXTY08N50D2

Part # Distributor Description Stock Price Buy
DISTI # 03AH1903
Newark Mosfet, N-Ch, 500V, 800Ma, 150Deg C, 60W, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:800Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:0V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTY08N50D2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1015
  • 1 $1.7600
  • 25 $1.7600
  • 100 $1.4900
  • 250 $1.4900
  • 500 $1.3800
  • 1,000 $1.2900
  • 2,500 $1.1800
$1.1800 / $1.7600 Buy Now
DISTI # IXTY08N50D2-ND
DigiKey MOSFET N-CH 500V 800MA TO252 Min Qty: 1 Lead time: 24 Weeks Container: Tube 15122
In Stock
  • 1 $2.9700
  • 70 $1.6320
  • 140 $1.6047
  • 560 $1.3540
  • 1,050 $1.2542
  • 2,030 $1.2060
$1.2060 / $2.9700 Buy Now
DISTI # V36:1790_15876758
Arrow Electronics Trans MOSFET N-CH 500V 0.8A 3-Pin(2+Tab) DPAK RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 36 Weeks Date Code: 2441 Americas - 280
  • 1 $2.0870
  • 70 $1.7480
  • 140 $1.5900
  • 560 $1.3560
  • 1,050 $1.2570
  • 2,030 $1.1780
$1.1780 / $2.0870 Buy Now
DISTI # 87744345
Verical Trans MOSFET N-CH 500V 0.8A 3-Pin(2+Tab) DPAK RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 2441 Americas - 280
  • 5 $2.0870
  • 70 $1.7480
  • 140 $1.5900
  • 560 $1.3560
  • 1,050 $1.2570
  • 2,030 $1.1780
$1.1780 / $2.0870 Buy Now

Part Details for IXTY08N50D2

IXTY08N50D2 CAD Models

IXTY08N50D2 Part Data Attributes

IXTY08N50D2 Littelfuse Inc
Buy Now Datasheet
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IXTY08N50D2 Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max 4.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 11 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application AMPLIFIER
Transistor Element Material SILICON

IXTY08N50D2 Related Parts

IXTY08N50D2 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the IXTY08N50D2 is a TO-252 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.

  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the PCB pads. Use a soldering technique that minimizes the risk of overheating the component.

  • The maximum allowed voltage transient for the IXTY08N50D2 is 650V, as specified in the datasheet. Exceeding this voltage may damage the component.

  • The IXTY08N50D2 is rated for operation up to 150°C. However, it's recommended to derate the component's power handling capability at high temperatures to ensure reliable operation.

  • To calculate the power dissipation of the IXTY08N50D2, use the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.

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