Part Details for IXTY08N50D2 by IXYS Corporation
Results Overview of IXTY08N50D2 by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IXTY08N50D2 Information
IXTY08N50D2 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTY08N50D2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTY08N50D2
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Mouser Electronics | MOSFETs N-CH MOSFETS 500V 800MA RoHS: Compliant | 22322 |
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$1.2500 / $3.0300 | Buy Now |
DISTI #
IXTY08N50D2
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TTI | MOSFETs N-CH MOSFETS 500V 800MA Min Qty: 350 Package Multiple: 70 Container: Tube | Americas - 0 |
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$1.6100 / $1.7100 | Buy Now |
DISTI #
IXTY08N50D2
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TME | Transistor: N-MOSFET, unipolar, 500V, 0.8A, 60W, TO252, 11ns Min Qty: 1 | 0 |
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$1.2900 / $2.5000 | RFQ |
DISTI #
IXTY08N50D2
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IBS Electronics | D2 SERIES - 100V - 1700V N-CHANNEL DEPLETION MODE POWER MOSFETS TO-252 ROHS Min Qty: 630 Package Multiple: 1 | 0 |
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$1.7160 / $1.7940 | Buy Now |
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Vyrian | Transistors | 6565 |
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RFQ |
Part Details for IXTY08N50D2
IXTY08N50D2 CAD Models
IXTY08N50D2 Part Data Attributes
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IXTY08N50D2
IXYS Corporation
Buy Now
Datasheet
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IXTY08N50D2
IXYS Corporation
Power Field-Effect Transistor, 4.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-252 | |
Package Description | PLASTIC PACKAGE-3 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Drain-source On Resistance-Max | 4.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
IXTY08N50D2 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IXTY08N50D2 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended derating curves for voltage and current, and to provide adequate heat sinking and thermal management.
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The recommended gate drive voltage for the IXTY08N50D2 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IXTY08N50D2 can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive and thermal management are adequate.
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The maximum allowable power dissipation for the IXTY08N50D2 is 150W, but this can be affected by the operating temperature and thermal management.