Datasheets
IXTY08N50D2 by:

Power Field-Effect Transistor, 4.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3

Part Details for IXTY08N50D2 by IXYS Corporation

Results Overview of IXTY08N50D2 by IXYS Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IXTY08N50D2 Information

IXTY08N50D2 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXTY08N50D2

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTY08N50D2
Mouser Electronics MOSFETs N-CH MOSFETS 500V 800MA RoHS: Compliant 22322
  • 1 $3.0300
  • 10 $2.3800
  • 70 $1.8900
  • 560 $1.5900
  • 1,050 $1.3600
  • 2,520 $1.2900
  • 5,040 $1.2500
$1.2500 / $3.0300 Buy Now
DISTI # IXTY08N50D2
TTI MOSFETs N-CH MOSFETS 500V 800MA Min Qty: 350 Package Multiple: 70 Container: Tube Americas - 0
  • 350 $1.7100
  • 560 $1.6700
  • 1,050 $1.6400
  • 2,030 $1.6100
$1.6100 / $1.7100 Buy Now
DISTI # IXTY08N50D2
TME Transistor: N-MOSFET, unipolar, 500V, 0.8A, 60W, TO252, 11ns Min Qty: 1 0
  • 1 $2.5000
  • 10 $1.9400
  • 70 $1.6600
  • 280 $1.4800
  • 560 $1.3800
  • 1,050 $1.3000
  • 2,030 $1.2900
$1.2900 / $2.5000 RFQ
DISTI # IXTY08N50D2
IBS Electronics D2 SERIES - 100V - 1700V N-CHANNEL DEPLETION MODE POWER MOSFETS TO-252 ROHS Min Qty: 630 Package Multiple: 1 0
  • 210 $1.7680
  • 350 $1.7550
  • 630 $1.7940
  • 1,400 $1.7290
  • 2,100 $1.7160
$1.7160 / $1.7940 Buy Now
Vyrian Transistors 6565
RFQ

Part Details for IXTY08N50D2

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IXTY08N50D2 Part Data Attributes

IXTY08N50D2 IXYS Corporation
Buy Now Datasheet
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IXTY08N50D2 IXYS Corporation Power Field-Effect Transistor, 4.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-252
Package Description PLASTIC PACKAGE-3
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max 4.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application AMPLIFIER
Transistor Element Material SILICON

IXTY08N50D2 Related Parts

IXTY08N50D2 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IXTY08N50D2 is -40°C to 150°C.

  • To ensure reliability, it's essential to follow the recommended derating curves for voltage and current, and to provide adequate heat sinking and thermal management.

  • The recommended gate drive voltage for the IXTY08N50D2 is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IXTY08N50D2 can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive and thermal management are adequate.

  • The maximum allowable power dissipation for the IXTY08N50D2 is 150W, but this can be affected by the operating temperature and thermal management.

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