Part Details for IXTY08N100D2-TRL by IXYS Corporation
Results Overview of IXTY08N100D2-TRL by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXTY08N100D2-TRL Information
IXTY08N100D2-TRL by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTY08N100D2-TRL
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTY08N100D2-TRL
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Mouser Electronics | MOSFET Modules IXTY08N100D2 TRL RoHS: Compliant | 0 |
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$1.7800 / $4.1100 | Order Now |
Part Details for IXTY08N100D2-TRL
IXTY08N100D2-TRL CAD Models
IXTY08N100D2-TRL Part Data Attributes
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IXTY08N100D2-TRL
IXYS Corporation
Buy Now
Datasheet
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IXTY08N100D2-TRL
IXYS Corporation
Power Field-Effect Transistor,
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Drain-source On Resistance-Max | 21 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6.5 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 60 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
IXTY08N100D2-TRL Frequently Asked Questions (FAQ)
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The recommended PCB footprint for IXTY08N100D2-TRL is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
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Yes, IXTY08N100D2-TRL is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast recovery time.
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To ensure reliable operation of IXTY08N100D2-TRL in high-temperature environments, it is recommended to use a heat sink with a thermal resistance of less than 1°C/W and to keep the junction temperature below 150°C.
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Yes, IXTY08N100D2-TRL is compatible with lead-free soldering processes and meets the requirements of the RoHS directive.
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The recommended gate drive voltage for IXTY08N100D2-TRL is between 10V and 15V, with a maximum gate current of 1A.