Datasheets
IXTY01N100 by:

Power Field-Effect Transistor,

Part Details for IXTY01N100 by Littelfuse Inc

Results Overview of IXTY01N100 by Littelfuse Inc

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IXTY01N100 Information

IXTY01N100 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXTY01N100

Part # Distributor Description Stock Price Buy
DISTI # 03AH1893
Newark Mosfet, N-Ch, 1Kv, 0.1A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:1Kv, Continuous Drain Current Id:100Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTY01N100 RoHS: Compliant Min Qty: 350 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 100 $1.8000
  • 500 $1.6300
  • 1,000 $1.4200
  • 2,500 $1.2700
$1.2700 / $1.8000 Buy Now
DISTI # IXTY01N100-ND
DigiKey MOSFET N-CH 1000V 100MA TO252AA Min Qty: 1 Lead time: 60 Weeks Container: Tube 14117
In Stock
  • 1 $3.5500
  • 70 $1.7049
  • 140 $1.5476
  • 560 $1.3041
  • 1,050 $1.2186
  • 2,030 $1.1539
$1.1539 / $3.5500 Buy Now

Part Details for IXTY01N100

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IXTY01N100 Part Data Attributes

IXTY01N100 Littelfuse Inc
Buy Now Datasheet
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IXTY01N100 Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 0.1 A
Drain-source On Resistance-Max 80 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 2 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 0.4 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

IXTY01N100 Related Parts

IXTY01N100 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for IXTY01N100 is a standard SOT-23 package with a minimum pad size of 0.8mm x 0.8mm and a maximum pad size of 1.2mm x 1.2mm. It's recommended to follow the PCB layout guidelines provided in the Littelfuse application note AN9313.

  • To ensure proper soldering, use a soldering iron with a temperature range of 250°C to 260°C and a solder with a melting point of 180°C to 220°C. Apply a small amount of solder to the pad and component lead, and use a soldering technique that minimizes the risk of overheating or cold solder joints.

  • The IXTY01N100 has a maximum surge current rating of 100A for 10/1000μs waveform, as per the IEC 61000-4-5 standard. This rating is based on the device's ability to withstand high-current surges without failing or degrading its performance.

  • The IXTY01N100 is rated for operation up to 150°C, but it's recommended to derate the device's performance at higher temperatures. Consult the datasheet and application notes for guidance on using the device in high-temperature environments.

  • Select the correct IXTY01N100 variant based on your application's specific requirements, such as voltage rating, current rating, and package type. Consult the datasheet and Littelfuse's selection guide to ensure the chosen variant meets your application's needs.

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