Datasheets
IXFT50N60P3 by:

Power Field-Effect Transistor,

Part Details for IXFT50N60P3 by Littelfuse Inc

Results Overview of IXFT50N60P3 by Littelfuse Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IXFT50N60P3 Information

IXFT50N60P3 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXFT50N60P3

Part # Distributor Description Stock Price Buy
DISTI # 03AH0953
Newark Discmsft Nchhiperfet-Polar3 To-268Aa/ Tube |Littelfuse IXFT50N60P3 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $6.9300
  • 500 $6.4400
$6.4400 / $6.9300 Buy Now
DISTI # IXFT50N60P3-ND
DigiKey MOSFET N-CH 600V 50A TO268 Min Qty: 1 Lead time: 35 Weeks Container: Tube 231
In Stock
  • 1 $11.3100
  • 30 $7.9477
  • 120 $6.3853
  • 510 $6.1418
$6.1418 / $11.3100 Buy Now

Part Details for IXFT50N60P3

IXFT50N60P3 CAD Models

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IXFT50N60P3 Part Data Attributes

IXFT50N60P3 Littelfuse Inc
Buy Now Datasheet
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IXFT50N60P3 Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 2.5 pF
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1040 W
Pulsed Drain Current-Max (IDM) 125 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFT50N60P3

This table gives cross-reference parts and alternative options found for IXFT50N60P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFT50N60P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IXFH50N60P3 Littelfuse Inc Check for Price Power Field-Effect Transistor, IXFT50N60P3 vs IXFH50N60P3
Part Number Manufacturer Composite Price Description Compare
IXFX48N60Q3 IXYS Corporation $13.6422 Power Field-Effect Transistor, 48A I(D), 600V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXFT50N60P3 vs IXFX48N60Q3
APT56M60L Microchip Technology Inc $14.6496 Power Field-Effect Transistor, 56A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA IXFT50N60P3 vs APT56M60L
APT56M60B2 Microchip Technology Inc $15.0911 Power Field-Effect Transistor, 56A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IXFT50N60P3 vs APT56M60B2
APT56F60L Microchip Technology Inc $15.6837 Power Field-Effect Transistor, 56A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA IXFT50N60P3 vs APT56F60L
APT56F60B2 Microchip Technology Inc $23.1094 Power Field-Effect Transistor, 56A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB IXFT50N60P3 vs APT56F60B2
IXFQ50N60P3 Littelfuse Inc $7.1417 Power Field-Effect Transistor, IXFT50N60P3 vs IXFQ50N60P3
IXFT50N60P3 IXYS Corporation $8.0995 Power Field-Effect Transistor, 50A I(D), 600V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXFT50N60P3 vs IXFT50N60P3
IXFX48N60Q3 Littelfuse Inc Check for Price Power Field-Effect Transistor, IXFT50N60P3 vs IXFX48N60Q3
IXFX48N60P IXYS Corporation Check for Price Power Field-Effect Transistor, 48A I(D), 600V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN IXFT50N60P3 vs IXFX48N60P
APT56F60B2 Microsemi Corporation Check for Price Power Field-Effect Transistor, 56A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, ROHS COMPLIANT, TO-247, T-MAX, 3 PIN IXFT50N60P3 vs APT56F60B2

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