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Part Details for IXFT36N50P by Littelfuse Inc
Results Overview of IXFT36N50P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXFT36N50P Information
IXFT36N50P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFT36N50P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0944
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Newark | Discmosfetn-Ch Hiperfet-Polar To-268Aa/ Tube |Littelfuse IXFT36N50P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$6.6100 / $7.1200 | Buy Now |
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DISTI #
IXFT36N50P-ND
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DigiKey | MOSFET N-CH 500V 36A TO268 Min Qty: 1 Lead time: 44 Weeks Container: Tube |
1590 In Stock |
|
$6.3863 / $10.9500 | Buy Now |
Part Details for IXFT36N50P
IXFT36N50P CAD Models
IXFT36N50P Part Data Attributes
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IXFT36N50P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFT36N50P
Littelfuse Inc
Power Field-Effect Transistor, 36A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.17 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 540 W | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFT36N50P
This table gives cross-reference parts and alternative options found for IXFT36N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFT36N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFH36N55Q2 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 36A I(D), 550V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXFT36N50P vs IXFH36N55Q2 |
| 2SK3415LS | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 40A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | IXFT36N50P vs 2SK3415LS |
| 2SK1426 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 100A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PBL, 3 PIN | IXFT36N50P vs 2SK1426 |
| 2SK1435 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 30A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PML, 3 PIN | IXFT36N50P vs 2SK1435 |
| 2SK789 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 15 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | IXFT36N50P vs 2SK789 |
| APT20M36SLLG | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 65A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | IXFT36N50P vs APT20M36SLLG |
| 2SK1694 | Shindengen Electronic Manufacturing Co Ltd | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ITO-220, 3 PIN | IXFT36N50P vs 2SK1694 |
| 2SK4120LS | onsemi | Check for Price | TRANSISTOR 10 A, 450 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FI(LS), 3 PIN, FET General Purpose Power | IXFT36N50P vs 2SK4120LS |
| 2SK2624 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 3A I(D), 600V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI, 3 PIN | IXFT36N50P vs 2SK2624 |
| PHB3N40E | NXP Semiconductors | Check for Price | TRANSISTOR 2.5 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-404, 3 PIN, FET General Purpose Power | IXFT36N50P vs PHB3N40E |