Part Details for IXFP34N65X2M by Littelfuse Inc
Results Overview of IXFP34N65X2M by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXFP34N65X2M Information
IXFP34N65X2M by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFP34N65X2M
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
03AH0822
|
Newark | Discmsft Nchultrajnctx2Class To-220Ab/Fp/ Tube |Littelfuse IXFP34N65X2M RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$3.9800 / $4.2900 | Buy Now |
|
DISTI #
75578176
|
RS | DiscMSFT NChUltraJnctX2Class TO-220AB/FP Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
|
$5.4000 / $5.8700 | RFQ |
Part Details for IXFP34N65X2M
IXFP34N65X2M CAD Models
IXFP34N65X2M Part Data Attributes
|
|
IXFP34N65X2M
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXFP34N65X2M
Littelfuse Inc
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXFP34N65X2M Frequently Asked Questions (FAQ)
-
The recommended PCB footprint for the IXFP34N65X2M is a standard TO-263 (D2PAK) footprint with a minimum pad size of 4.5mm x 2.5mm and a thermal pad size of 3.5mm x 2.5mm.
-
Yes, the IXFP34N65X2M is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and fast switching times. However, it's essential to consider the device's parasitic inductance and capacitance when designing the circuit.
-
To ensure proper cooling, provide a thermal path from the device to a heat sink or a metal plate on the PCB. Apply a thermal interface material (TIM) between the device and the heat sink, and ensure good airflow around the device. The maximum junction temperature (Tj) should not exceed 150°C.
-
The recommended gate drive voltage for the IXFP34N65X2M is between 10V and 15V. A higher gate drive voltage can reduce the device's on-state resistance, but it may also increase the gate charge and switching losses.
-
Yes, the IXFP34N65X2M can be paralleled to increase current handling, but it's essential to ensure that the devices are matched in terms of their electrical characteristics and thermal performance. Additionally, the PCB design should be optimized to minimize current imbalance and thermal gradients between the devices.