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Part Details for IXFH120N20P by Littelfuse Inc
Results Overview of IXFH120N20P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IXFH120N20P Information
IXFH120N20P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFH120N20P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFH120N20P-ND
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DigiKey | MOSFET N-CH 200V 120A TO247AD Min Qty: 1 Lead time: 37 Weeks Container: Tube |
302 In Stock |
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$7.1283 / $13.4200 | Buy Now |
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DISTI #
75577843
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RS | DiscMosfetN-CH HiPerFET-Polar TO-247AD Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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$10.1400 / $11.0200 | RFQ |
Part Details for IXFH120N20P
IXFH120N20P CAD Models
IXFH120N20P Part Data Attributes
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IXFH120N20P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFH120N20P
Littelfuse Inc
Power Field-Effect Transistor, 120A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | TO-247, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 265 pF | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 714 W | |
| Pulsed Drain Current-Max (IDM) | 300 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH120N20P
This table gives cross-reference parts and alternative options found for IXFH120N20P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH120N20P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTK120N20P | Littelfuse Inc | $10.2479 | Power Field-Effect Transistor, 120A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | IXFH120N20P vs IXTK120N20P |
| IXFK120N20P | Littelfuse Inc | $10.4777 | Power Field-Effect Transistor, 120A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | IXFH120N20P vs IXFK120N20P |
| IXTK120N20P | IXYS Corporation | $5.5101 | Power Field-Effect Transistor, 120A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | IXFH120N20P vs IXTK120N20P |
| IXTQ120N20P | IXYS Corporation | $7.6876 | Power Field-Effect Transistor, 120A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXFH120N20P vs IXTQ120N20P |
| IXFK110N20 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 110A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | IXFH120N20P vs IXFK110N20 |
| IXTQ120N20P | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 120A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXFH120N20P vs IXTQ120N20P |
IXFH120N20P Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the IXFH120N20P is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
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The IXFH120N20P is rated for operation up to 150°C, but it's recommended to derate the power dissipation at higher temperatures to ensure reliable operation. Consult the datasheet for thermal derating information.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or less, and ensuring good thermal contact between the device and the heat sink. A thermal interface material (TIM) can also be used to improve heat transfer.
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The IXFH120N20P has a maximum surge current rating of 400A for 10ms, but this rating may vary depending on the specific application and operating conditions. Consult the datasheet for more information.
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Yes, the IXFH120N20P can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the current sharing is balanced to prevent overheating and reduce reliability.