-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IS43DR16640C-25DBLI by Integrated Silicon Solution Inc
Results Overview of IS43DR16640C-25DBLI by Integrated Silicon Solution Inc
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
IS43DR16640C-25DBLI Information
IS43DR16640C-25DBLI by Integrated Silicon Solution Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for IS43DR16640C-25DBLI
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
81Y1255
|
Newark | Dram, 64M X 16Bit, Wbga-84, Dram Type:Ddr2, Memory Configuration:64M X 16Bit, Clock Frequency Max:400Mhz, Ic Case/Package:Wbga, No. Of Pins:84Pins, Supply Voltage Nom:1.8V, Ic Mounting:Surface Mount, Operating Temperature Min:-40°Crohs Compliant: Yes |Integrated Silicon Solution/issi IS43DR16640C-25DBLI RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 159 |
|
$3.6200 | Buy Now |
|
DISTI #
706-1564-ND
|
DigiKey | IC DRAM 1GBIT PARALLEL 84TWBGA Min Qty: 1 Lead time: 8 Weeks Container: Tray |
233 In Stock |
|
$4.5335 / $5.7400 | Buy Now |
|
DISTI #
81Y1255
|
Avnet Americas | DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin TWBGA - Bulk (Alt: 81Y1255) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 1 Days Container: Bulk | 159 Partner Stock |
|
$3.8900 / $4.7700 | Buy Now |
|
DISTI #
IS43DR16640C-25DBLI
|
Avnet Americas | DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin TWBGA - Trays (Alt: IS43DR16640C-25DBLI) RoHS: Compliant Min Qty: 209 Package Multiple: 209 Lead time: 8 Weeks, 0 Days Container: Tray | 0 |
|
$3.4155 / $3.6531 | Buy Now |
|
DISTI #
870-3DR16640C-25DBLI
|
Mouser Electronics | DRAM DDR2,1G,1.8V, RoHs 400MHz, 64Mx16, IT RoHS: Compliant | 255 |
|
$4.5100 / $5.7400 | Buy Now |
|
DISTI #
IS43DR16640C-25DBLI
|
Avnet Asia | DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin TWBGA (Alt: IS43DR16640C-25DBLI) RoHS: Compliant Min Qty: 209 Package Multiple: 209 Lead time: 6 Weeks, 0 Days | 0 |
|
$3.9393 / $4.4893 | Buy Now |
|
DISTI #
IS43DR16640C-25DBLI
|
Avnet Silica | DRAM Chip DDR2 SDRAM 1GBit 64Mx16 18V 84Pin TWBGA (Alt: IS43DR16640C-25DBLI) RoHS: Compliant Min Qty: 209 Package Multiple: 209 Lead time: 14 Weeks, 0 Days | Silica - 1463 |
|
Buy Now | |
|
DISTI #
IS43DR16640C-25DBLI
|
EBV Elektronik | DRAM Chip DDR2 SDRAM 1GBit 64Mx16 18V 84Pin TWBGA (Alt: IS43DR16640C-25DBLI) RoHS: Compliant Min Qty: 209 Package Multiple: 209 Lead time: 7 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
Win Source Electronics | IC DRAM 1G PARALLEL 84TWBGA | 16710 |
|
$3.4823 / $5.2229 | Buy Now |
Part Details for IS43DR16640C-25DBLI
IS43DR16640C-25DBLI CAD Models
IS43DR16640C-25DBLI Part Data Attributes
|
|
IS43DR16640C-25DBLI
Integrated Silicon Solution Inc
Buy Now
Datasheet
|
Compare Parts:
IS43DR16640C-25DBLI
Integrated Silicon Solution Inc
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, TWBGA-84
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Factory Lead Time | 10 Weeks, 1 Day | |
| Samacsys Manufacturer | Integrated Silicon Solution Inc. | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 400 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B84 | |
| JESD-609 Code | e1 | |
| Length | 12.5 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 84 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 64MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA84,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.025 A | |
| Supply Current-Max | 0.28 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for IS43DR16640C-25DBLI
This table gives cross-reference parts and alternative options found for IS43DR16640C-25DBLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43DR16640C-25DBLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MT47H64M16NF-25E:M | Micron Technology Inc | $3.7779 | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | IS43DR16640C-25DBLI vs MT47H64M16NF-25E:M |
| W971GG6KB-25 | Winbond Electronics Corp | Check for Price | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 | IS43DR16640C-25DBLI vs W971GG6KB-25 |
| W971GG6KB25I | Winbond Electronics Corp | Check for Price | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 | IS43DR16640C-25DBLI vs W971GG6KB25I |
| MT47H64M16NF-25E:MTR | Micron Technology Inc | Check for Price | DDR DRAM, 64MX16, CMOS, PBGA84, FBGA-84 | IS43DR16640C-25DBLI vs MT47H64M16NF-25E:MTR |
| MT47H64M16NF-25EXIT:M | Micron Technology Inc | Check for Price | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | IS43DR16640C-25DBLI vs MT47H64M16NF-25EXIT:M |
IS43DR16640C-25DBLI Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the IS43DR16640C-25DBLI is 0°C to 85°C.
-
To ensure signal integrity, it is recommended to use a signal integrity analysis tool to simulate the signal transmission and optimize the PCB design. Additionally, using a termination resistor and ensuring proper impedance matching can help minimize signal reflections and improve signal quality.
-
The recommended refresh rate for the IS43DR16640C-25DBLI is 8192 refreshes per second, with a refresh interval of 7.8us.
-
The IS43DR16640C-25DBLI is designed to operate at a voltage supply of 1.5V ± 0.075V. Using it with a different voltage supply may affect its performance and reliability. It is recommended to use the specified voltage supply to ensure optimal performance.
-
The IS43DR16640C-25DBLI has built-in error detection and correction mechanisms, such as ECC (Error-Correcting Code) and CRC (Cyclic Redundancy Check). In case of errors, the system can retry the operation or use error correction mechanisms to recover the data.