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Flash, 4MX1, PDSO8, SOIC-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IS25WQ040-JNLE by Integrated Silicon Solution Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IS25WQ040-JNLE-ND
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DigiKey | IC FLASH 4MBIT SPI 104MHZ 8SOIC Lead time: 12 Weeks Container: Tube | Temporarily Out of Stock |
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Buy Now | |
DISTI #
IS25WQ040-JNLE
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Avnet Americas | NOR Flash Serial-SPI 1.8V 4Mbit 4M x 1bit 8ns 8-Pin SOIC - Trays (Alt: IS25WQ040-JNLE) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tray | 0 |
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RFQ | |
DISTI #
870-IS25WQ040-JNLE
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Mouser Electronics | NOR Flash 4Mb QSPI, 8-pin SOP 150Mil, RoHS RoHS: Compliant | 0 |
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$0.3690 / $0.4410 | Order Now |
DISTI #
IS25WQ040-JNLE
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TME | IC: FLASH memory, 4MbFLASH, SPI, 104MHz, 1.65÷1.95V, SOP8, serial Min Qty: 1 | 53 |
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$0.5430 / $0.6430 | Buy Now |
DISTI #
IS25WQ040-JNLE
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Avnet Silica | NOR Flash SerialSPI 18V 4Mbit 4M x 1bit 8ns 8Pin SOIC (Alt: IS25WQ040-JNLE) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 14 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
IS25WQ040-JNLE
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EBV Elektronik | NOR Flash SerialSPI 18V 4Mbit 4M x 1bit 8ns 8Pin SOIC (Alt: IS25WQ040-JNLE) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 41 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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IS25WQ040-JNLE
Integrated Silicon Solution Inc
Buy Now
Datasheet
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Compare Parts:
IS25WQ040-JNLE
Integrated Silicon Solution Inc
Flash, 4MX1, PDSO8, SOIC-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
Package Description | SOIC-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Integrated Silicon Solution Inc. | |
Clock Frequency-Max (fCLK) | 104 MHz | |
Data Retention Time-Min | 20 | |
Endurance | 100000 Write/Erase Cycles | |
JESD-30 Code | R-PDSO-G8 | |
Length | 4.9 mm | |
Memory Density | 4194304 bit | |
Memory IC Type | FLASH | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Terminals | 8 | |
Number of Words | 524288 words | |
Number of Words Code | 512000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 105 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 512KX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | SOP | |
Package Equivalence Code | SOP8,.25 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Parallel/Serial | SERIAL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Programming Voltage | 1.8 V | |
Seated Height-Max | 1.75 mm | |
Serial Bus Type | QSPI | |
Standby Current-Max | 0.00005 A | |
Supply Current-Max | 0.025 mA | |
Supply Voltage-Max (Vsup) | 1.95 V | |
Supply Voltage-Min (Vsup) | 1.65 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Type | NOR TYPE | |
Width | 3.9 mm | |
Write Protection | HARDWARE/SOFTWARE |
The maximum operating temperature range for the IS25WQ040-JNLE is -40°C to 85°C.
To ensure data integrity during power-down or power-up sequences, it is recommended to use the WP# pin to protect the memory array from unwanted writes. Additionally, the device has a built-in power-down detection circuit that automatically puts the device into a low-power state when VCC falls below a certain threshold.
The recommended clock frequency for the IS25WQ040-JNLE is up to 104 MHz, but it can operate at frequencies up to 133 MHz with some limitations.
Page erase operations can be performed using the PAGE ERASE command, and block erase operations can be performed using the BLOCK ERASE command. The device also supports a bulk erase feature that allows erasing the entire memory array at once.
The WP# pin is a write-protect pin that allows the user to protect the memory array from unwanted writes. When the WP# pin is low, the device is in write-protect mode, and when it is high, the device is in write-enable mode.