-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRLML6401TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
63J7615
|
Newark | P Channel Mosfet, -12V, -4.3A Sot-23, Channel Type:P Channel, Drain Source Voltage Vds:12V, Continuous Drain Current Id:4.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:550Mv Rohs Compliant: Yes |Infineon IRLML6401TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 179470 |
|
$0.0890 | Buy Now |
DISTI #
87AK1453
|
Newark | Mosfet, P-Ch, 12V, 4.3A, Sot-23 Rohs Compliant: Yes |Infineon IRLML6401TRPBF RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.0990 / $0.1170 | Buy Now |
DISTI #
IRLML6401PBFCT-ND
|
DigiKey | MOSFET P-CH 12V 4.3A SOT23 Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
24429 In Stock |
|
$0.0605 / $0.4300 | Buy Now |
DISTI #
63J7615
|
Avnet Americas | Power MOSFET, P Channel, 12 V, 4.3 A, 50 Milliohms, SOT-23, 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 63J7615) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 23 Weeks, 6 Days Container: Ammo Pack | 27153 Partner Stock |
|
$0.1930 / $0.5240 | Buy Now |
DISTI #
IRLML6401TRPBF
|
Avnet Americas | Power MOSFET, P Channel, 12 V, 4.3 A, 50 Milliohms, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: IRLML6401TRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.0467 / $0.0494 | Buy Now |
DISTI #
942-IRLML6401TRPBF
|
Mouser Electronics | MOSFETs MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl RoHS: Compliant | 166282 |
|
$0.0620 / $0.3600 | Buy Now |
DISTI #
E02:0323_00175250
|
Arrow Electronics | Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Date Code: 2517 | Europe - 300000 |
|
$0.0500 / $0.0803 | Buy Now |
DISTI #
E21:3489_00175250
|
Arrow Electronics | Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2505 | Europe - 6656 |
|
$0.0402 | Buy Now |
DISTI #
V72:2272_13890238
|
Arrow Electronics | Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2402 Container: Cut Strips | Americas - 2921 |
|
$0.0605 / $0.0765 | Buy Now |
|
Future Electronics | Single P-Channel 12 V 0.05 Ohm 10 nC SMT HEXFET® Power Mosfet - MICRO-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Container: Reel | 1203000Reel |
|
$0.0490 / $0.0530 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRLML6401TRPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRLML6401TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 23 Weeks, 6 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 33 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 4.3 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 125 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 1.3 W | |
Power Dissipation-Max (Abs) | 1.3 W | |
Pulsed Drain Current-Max (IDM) | 34 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLML6401TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML6401TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
SI2333DDS-T1-GE3 | Vishay Intertechnologies | $0.2637 | Small Signal Field-Effect Transistor, 6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN | IRLML6401TRPBF vs SI2333DDS-T1-GE3 |
SI2333DS-T1-E3 | Vishay Intertechnologies | $0.5184 | Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | IRLML6401TRPBF vs SI2333DS-T1-E3 |
SI2333DS-T1-GE3 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | IRLML6401TRPBF vs SI2333DS-T1-GE3 |
SI2333DS-T1-BE3 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | IRLML6401TRPBF vs SI2333DS-T1-BE3 |
SI2333DDS-T1-BE3 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | IRLML6401TRPBF vs SI2333DDS-T1-BE3 |
The maximum operating temperature range for the IRLML6401TRPBF is -55°C to 150°C.
To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
For optimal performance, it's recommended to follow Infineon's guidelines for PCB layout and design, including using a solid ground plane, minimizing trace lengths, and using bypass capacitors to reduce noise and ringing.
To prevent ESD damage, it's essential to follow proper ESD handling procedures, such as using ESD-safe workstations, wearing ESD-protective clothing, and using ESD-protective packaging and storage materials.
For reliable assembly, it's recommended to follow Infineon's guidelines for soldering and assembly, including using a controlled soldering temperature, using a soldering iron with a temperature-controlled tip, and avoiding excessive mechanical stress.