Part Details for IRFZ44EPBF by International Rectifier
Results Overview of IRFZ44EPBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFZ44EPBF Information
IRFZ44EPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFZ44EPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ |
Part Details for IRFZ44EPBF
IRFZ44EPBF CAD Models
IRFZ44EPBF Part Data Attributes
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IRFZ44EPBF
International Rectifier
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Datasheet
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IRFZ44EPBF
International Rectifier
Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH RELIABILITY, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 48 A | |
| Drain-source On Resistance-Max | 0.023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 192 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFZ44EPBF
This table gives cross-reference parts and alternative options found for IRFZ44EPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ44EPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFZ44EPBF | Infineon Technologies AG | $0.8137 | Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRFZ44EPBF vs IRFZ44EPBF |
| IRFZ44E | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRFZ44EPBF vs IRFZ44E |
| IRFZ44E | International Rectifier | Check for Price | Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRFZ44EPBF vs IRFZ44E |
| FQPF8N90C | Fairchild Semiconductor Corporation | Check for Price | N-Channel QFET® MOSFET 900V, 6.3A, 1.9Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL | IRFZ44EPBF vs FQPF8N90C |
| FQAF6N90 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | IRFZ44EPBF vs FQAF6N90 |
IRFZ44EPBF Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRFZ44EPBF is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within 80% of its maximum voltage and current ratings to ensure reliable operation.
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The junction-to-case thermal resistance (RθJC) for the IRFZ44EPBF is not explicitly stated in the datasheet, but it can be calculated using the thermal resistance values provided in the datasheet. RθJC can be estimated as RθJC = RθJA - RθCS, where RθJA is the junction-to-ambient thermal resistance and RθCS is the case-to-sink thermal resistance.
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The recommended gate drive voltage for the IRFZ44EPBF is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching speed and reduce losses, but may also increase the risk of gate oxide damage.
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Yes, the IRFZ44EPBF can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is designed to minimize ringing and oscillations.
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The internal diode in the IRFZ44EPBF can cause voltage spikes during switching, which can be mitigated by using a snubber circuit or a diode clamp. It's also essential to ensure that the gate drive circuitry is designed to minimize the diode's recovery time and reduce the risk of voltage spikes.