Part Details for IRFR9024PBF by Vishay Siliconix
Results Overview of IRFR9024PBF by Vishay Siliconix
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFR9024PBF Information
IRFR9024PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFR9024PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFR9024PBF-ND
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DigiKey | MOSFET P-CH 60V 8.8A DPAK Min Qty: 1 Lead time: 15 Weeks Container: Tube |
1930 In Stock |
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$0.7825 / $1.5200 | Buy Now |
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DISTI #
70459488
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RS | MOSFET P-CH 60V 8.8A DPAK Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$1.2600 / $1.4800 | RFQ |
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Bristol Electronics | 102 |
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RFQ | ||
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Quest Components | 81 |
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$0.8250 / $1.6500 | Buy Now | |
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ComSIT USA | POWER MOSFET Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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New Advantage Corporation | Single P-Channel 60 V 0.28 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant Min Qty: 1 Package Multiple: 75 | 4125 |
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$0.7231 / $0.7833 | Buy Now |
Part Details for IRFR9024PBF
IRFR9024PBF CAD Models
IRFR9024PBF Part Data Attributes
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IRFR9024PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFR9024PBF
Vishay Siliconix
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-252 | |
| Package Description | ROHS COMPLIANT, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 8.8 A | |
| Drain-source On Resistance-Max | 0.28 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR9024PBF
This table gives cross-reference parts and alternative options found for IRFR9024PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR9024PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFR9024TRPBF | Vishay Intertechnologies | $1.1032 | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | IRFR9024PBF vs IRFR9024TRPBF |
| IRFR9024TRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | IRFR9024PBF vs IRFR9024TRR |
| IRFR9024 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 9.9A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | IRFR9024PBF vs IRFR9024 |
| IRFR9024TR | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | IRFR9024PBF vs IRFR9024TR |
| IRFR9024 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, D-PAK-3 | IRFR9024PBF vs IRFR9024 |
| IRFR9024TRRPBF | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | IRFR9024PBF vs IRFR9024TRRPBF |
IRFR9024PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFR9024PBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
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The recommended gate drive voltage for the IRFR9024PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRFR9024PBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified frequency range and that proper thermal management is implemented.
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Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.