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Part Details for IRFR320TRPBF-BE3 by Vishay Intertechnologies
Results Overview of IRFR320TRPBF-BE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFR320TRPBF-BE3 Information
IRFR320TRPBF-BE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFR320TRPBF-BE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
87AJ1542
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Newark | N-Channel 400V |Vishay IRFR320TRPBF-BE3 RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.7850 / $0.8770 | Buy Now |
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DISTI #
IRFR320TRPBF-BE3
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Avnet Americas | N-CHANNEL 400V - Tape and Reel (Alt: IRFR320TRPBF-BE3) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks, 0 Days Container: Reel | 2000 |
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$0.7084 / $0.7232 | Buy Now |
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DISTI #
78-IRFR320TRPBF-BE3
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Mouser Electronics | MOSFETs TO252 400V 3.1A N-CH MOSFET RoHS: Compliant | 24662 |
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$0.7530 / $2.2600 | Buy Now |
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DISTI #
IRFR320TRPBF-BE3
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TTI | MOSFETs TO252 400V 3.1A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel | Americas - 0 |
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$0.9600 / $1.0300 | Buy Now |
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DISTI #
IRFR320TRPBF-BE3
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EBV Elektronik | NCHANNEL 400V (Alt: IRFR320TRPBF-BE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 9 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRFR320TRPBF-BE3
IRFR320TRPBF-BE3 CAD Models
IRFR320TRPBF-BE3 Part Data Attributes
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IRFR320TRPBF-BE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFR320TRPBF-BE3
Vishay Intertechnologies
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 160 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 3.1 A | |
| Drain-source On Resistance-Max | 1.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 47 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFR320TRPBF-BE3 Frequently Asked Questions (FAQ)
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The IRFR320TRPBF-BE3 has an operating temperature range of -55°C to 175°C, making it suitable for a wide range of applications.
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To ensure safe operating area, you should consider the maximum voltage, current, and power dissipation ratings, as well as the thermal characteristics of the device. You can refer to the datasheet's SOA curves and thermal derating charts to ensure safe operation.
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The recommended gate drive voltage for the IRFR320TRPBF-BE3 is between 4.5V and 10V, with a typical value of 5V. This ensures reliable switching and minimizes power losses.
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The IRFR320TRPBF-BE3 has an integrated ESD protection diode, but it's still important to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
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The maximum allowed voltage for the gate-source and gate-drain pins is ±20V, with a maximum gate-source voltage of ±15V for reliable operation.