Part Details for IRFR320TRL by Vishay Intertechnologies
Results Overview of IRFR320TRL by Vishay Intertechnologies
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFR320TRL Information
IRFR320TRL by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFR320TRL
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFR320TRL
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Avnet Americas | MOSFET N-CHANNEL 400V - Tape and Reel (Alt: IRFR320TRL) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ |
Part Details for IRFR320TRL
IRFR320TRL CAD Models
IRFR320TRL Part Data Attributes
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IRFR320TRL
Vishay Intertechnologies
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Datasheet
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IRFR320TRL
Vishay Intertechnologies
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| Factory Lead Time | 111 Weeks | |
| Avalanche Energy Rating (Eas) | 160 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 3.1 A | |
| Drain-source On Resistance-Max | 1.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR320TRL
This table gives cross-reference parts and alternative options found for IRFR320TRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR320TRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFR320PBF | Vishay Intertechnologies | $0.6124 | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | IRFR320TRL vs IRFR320PBF |
| IRFR320TRPBF | Vishay Intertechnologies | $1.0265 | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | IRFR320TRL vs IRFR320TRPBF |
| IRFR320 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | IRFR320TRL vs IRFR320 |
| SIHFR320TRL-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | IRFR320TRL vs SIHFR320TRL-GE3 |
| IRFR320 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | IRFR320TRL vs IRFR320 |
| IRFR320TRRPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | IRFR320TRL vs IRFR320TRRPBF |
| SIHFR320TRL-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power | IRFR320TRL vs SIHFR320TRL-GE3 |