Part Details for IRFPS40N60KPBF by Vishay Siliconix
Results Overview of IRFPS40N60KPBF by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
IRFPS40N60KPBF Information
IRFPS40N60KPBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRFPS40N60KPBF
IRFPS40N60KPBF CAD Models
IRFPS40N60KPBF Part Data Attributes
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IRFPS40N60KPBF
Vishay Siliconix
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Datasheet
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IRFPS40N60KPBF
Vishay Siliconix
Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPER-247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | ROHS COMPLIANT, SUPER-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 600 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFPS40N60KPBF
This table gives cross-reference parts and alternative options found for IRFPS40N60KPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFPS40N60KPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRFPS40N60KPBF | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, SUPER TO-247AC, 3 PIN | IRFPS40N60KPBF vs IRFPS40N60KPBF |
IRFPS40N60KPBF Frequently Asked Questions (FAQ)
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The maximum junction temperature for IRFPS40N60KPBF is 175°C, which is a typical value for most power MOSFETs. However, it's essential to ensure that the device is properly cooled to maintain a safe operating temperature.
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To calculate the power dissipation, you need to know the drain-source on-resistance (RDS(on)), the drain current (ID), and the voltage across the MOSFET (VDS). The power dissipation can be calculated using the formula: Pd = ID^2 * RDS(on) + VDS * ID. You can find the RDS(on) value in the datasheet.
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The recommended gate drive voltage for IRFPS40N60KPBF is between 10V and 15V. A higher gate drive voltage can reduce the RDS(on) and improve the switching performance, but it may also increase the gate charge and power consumption.
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Yes, IRFPS40N60KPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times. However, you need to ensure that the MOSFET is properly cooled and that the switching frequency is within the recommended range to avoid overheating and reduce electromagnetic interference (EMI).
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To protect the MOSFET from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. You can also add a gate-source voltage clamp to prevent overvoltage on the gate. Additionally, ensure that the MOSFET is properly sized for the application and that the PCB layout is designed to minimize parasitic inductance and capacitance.