Part Details for IRFP23N50LPBF by Vishay Intertechnologies
Results Overview of IRFP23N50LPBF by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFP23N50LPBF Information
IRFP23N50LPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP23N50LPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
38K2560
|
Newark | Mosfet, N, 500V, 23A, To-247Ac, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:23A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Product Range:-Rohs Compliant: Yes |Vishay IRFP23N50LPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
DISTI #
IRFP23N50LPBF
|
Avnet Americas | MOSFET N-CHANNEL 500V - Bulk (Alt: IRFP23N50LPBF) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
|
$3.5341 / $3.7550 | Buy Now |
|
DISTI #
IRFP23N50LPBF
|
TME | Transistor: N-MOSFET, unipolar, 500V, 23A, Idm: 92A, 370W, TO247AC Min Qty: 1 | 418 |
|
$3.1300 / $6.4700 | Buy Now |
|
DISTI #
IRFP23N50LPBF
|
Avnet Asia | MOSFET N-CHANNEL 500V (Alt: IRFP23N50LPBF) RoHS: Compliant Min Qty: 500 Package Multiple: 500 | 1000 |
|
RFQ | |
|
|
LCSC | 500V 23A 190m10V14A 3V 1 N-channel TO-247-3 MOSFETs ROHS | 96 |
|
$3.7537 / $5.8236 | Buy Now |
Part Details for IRFP23N50LPBF
IRFP23N50LPBF CAD Models
IRFP23N50LPBF Part Data Attributes
|
|
IRFP23N50LPBF
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
IRFP23N50LPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-247AC | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 410 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 23 A | |
| Drain-source On Resistance-Max | 0.235 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 370 W | |
| Pulsed Drain Current-Max (IDM) | 92 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP23N50LPBF
This table gives cross-reference parts and alternative options found for IRFP23N50LPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP23N50LPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFP23N50L | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | IRFP23N50LPBF vs IRFP23N50L |
| IRFP23N50LPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | IRFP23N50LPBF vs IRFP23N50LPBF |
IRFP23N50LPBF Frequently Asked Questions (FAQ)
-
The SOA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. Consult the application note AN1045 from Vishay for guidance on SOA calculations.
-
To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) that is at least 10V higher than the specified gate threshold voltage (Vgs(th)). Additionally, use a gate driver with a low output impedance to minimize power losses.
-
For optimal thermal performance, use a PCB layout with a large copper area for heat dissipation. Ensure good thermal contact between the MOSFET and the heat sink or PCB. Consult the application note AN1025 from Vishay for PCB layout and thermal management guidelines.
-
Yes, the IRFP23N50LPBF is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, ensure that the gate driver and PCB layout are optimized for high-frequency operation to minimize power losses and electromagnetic interference (EMI).
-
Use a voltage clamp or transient voltage suppressor (TVS) to protect the MOSFET from overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.