Part Details for IRFN150SMD-JQR-BR4 by TT Electronics Resistors
Results Overview of IRFN150SMD-JQR-BR4 by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFN150SMD-JQR-BR4 Information
IRFN150SMD-JQR-BR4 by TT Electronics Resistors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRFN150SMD-JQR-BR4
IRFN150SMD-JQR-BR4 CAD Models
IRFN150SMD-JQR-BR4 Part Data Attributes
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IRFN150SMD-JQR-BR4
TT Electronics Resistors
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Datasheet
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IRFN150SMD-JQR-BR4
TT Electronics Resistors
Power Field-Effect Transistor, 27A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TT ELECTRONICS PLC | |
Package Description | CHIP CARRIER, R-CBCC-N3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 27 A | |
Drain-source On Resistance-Max | 0.081 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-CBCC-N3 | |
JESD-609 Code | e4 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 108 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | GOLD | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for IRFN150SMD-JQR-BR4
This table gives cross-reference parts and alternative options found for IRFN150SMD-JQR-BR4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN150SMD-JQR-BR4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IRFN150 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN | IRFN150SMD-JQR-BR4 vs IRFN150 |
IRFN150SMD-JQR-BR4 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | IRFN150SMD-JQR-BR4 vs IRFN150SMD-JQR-BR4 |
IRFN150 | International Rectifier | Check for Price | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | IRFN150SMD-JQR-BR4 vs IRFN150 |
JANTX2N7224U | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, SMD-1, U-PKG-3 | IRFN150SMD-JQR-BR4 vs JANTX2N7224U |
IRFN150SMD | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 27A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | IRFN150SMD-JQR-BR4 vs IRFN150SMD |
IRFN150SMDR4 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | IRFN150SMD-JQR-BR4 vs IRFN150SMDR4 |
IRFN150R4 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN | IRFN150SMD-JQR-BR4 vs IRFN150R4 |
JANTXV2N7224U | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | IRFN150SMD-JQR-BR4 vs JANTXV2N7224U |
IRFN150SMD | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | IRFN150SMD-JQR-BR4 vs IRFN150SMD |
2N7224UE3 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, SMD-1, U-PKG-3 | IRFN150SMD-JQR-BR4 vs 2N7224UE3 |