Manufacturer | Description | Price Range | Set Alert | Details |
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International Rectifier | POWER FIELD-EFFECT TRANSISTOR, 28A I(D), 100V, 0.125OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | $256.5456 |
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TT Electronics Resistors | Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN |
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TT Electronics Power and Hybrid / Semelab Limited | 28A, 100V, 0.125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN |
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Infineon Technologies AG | Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN |
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