Part Details for IRFD020PBF by Vishay Siliconix
Results Overview of IRFD020PBF by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Audio and Video Systems
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
IRFD020PBF Information
IRFD020PBF by Vishay Siliconix is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFD020PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFD020PBF-ND
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DigiKey | MOSFET N-CH 50V 2.4A 4DIP Min Qty: 1 Lead time: 14 Weeks Container: Bulk |
3933 In Stock |
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$0.7136 / $2.4300 | Buy Now |
Part Details for IRFD020PBF
IRFD020PBF CAD Models
IRFD020PBF Part Data Attributes
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IRFD020PBF
Vishay Siliconix
Buy Now
Datasheet
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IRFD020PBF
Vishay Siliconix
TRANSISTOR 2400 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, HVMDIP-3, FET General Purpose Small Signal
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | DIP | |
| Package Description | IN-LINE, R-PDIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 2.4 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFD020PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFD020PBF is -55°C to 175°C.
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Yes, the IRFD020PBF is a fast-switching MOSFET with a rise time of 10ns and a fall time of 12ns.
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The maximum drain-source voltage rating for the IRFD020PBF is 200V.
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Yes, the IRFD020PBF is suitable for high-frequency applications due to its low gate charge and fast switching times.
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Yes, the IRFD020PBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.