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Transistors / Power Field-Effect Transistors / IRFD014PBF
Datasheets
IRFD014PBF by:

Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4

Part Details for IRFD014PBF by Vishay Intertechnologies

Results Overview of IRFD014PBF by Vishay Intertechnologies

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IRFD014PBF Information

IRFD014PBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFD014PBF

Part # Distributor Description Stock Price Buy
DISTI # 97K1981
Newark |Vishay IRFD014PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 10
  • 1 $0.0610
  • 10 $0.0610
  • 25 $0.0610
  • 50 $0.0610
  • 100 $0.0610
  • 500 $0.0610
  • 1,000 $0.0610
  • 2,500 $0.0610
$0.0610 Buy Now
DISTI # 97K1981
Avnet Americas MOSFET N-CHANNEL 60V - Bulk (Alt: 97K1981) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk 0
  • 1 $0.8140
  • 10 $0.5800
  • 25 $0.5150
  • 50 $0.4520
  • 100 $0.3840
$0.3840 / $0.8140 Buy Now
DISTI # E02:0323_00193677
Arrow Electronics Trans MOSFET N-CH 60V 1.7A 4-Pin HVMDIP RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2514 Europe - 7277
  • 1 $1.2016
  • 5,000 $0.6071
$0.6071 / $1.2016 Buy Now
DISTI # V99:2348_09218515
Arrow Electronics Trans MOSFET N-CH 60V 1.7A 4-Pin HVMDIP RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2236 Americas - 43
  • 1 $0.8154
  • 5,000 $0.5500
$0.5500 / $0.8154 Buy Now
DISTI # 70079028
RS Power MOSFET, N-Ch, VDSS 60V, RDS(ON) 0.2Ohm, ID 1.7A, HD-1,PD 1.3W, VGS+/-20V, Qg 11nC Min Qty: 2500 Package Multiple: 1 Container: Bulk 0
  • 2,500 $1.5100
  • 25,000 $1.4400
  • 125,000 $1.3600
  • 250,000 $1.2800
$1.2800 / $1.5100 RFQ
DISTI # 88176880
Verical Trans MOSFET N-CH 60V 1.7A 4-Pin HVMDIP RoHS: Compliant Min Qty: 24 Package Multiple: 1 Date Code: 2514 Americas - 7272
  • 24 $1.1982
  • 5,000 $0.6054
$0.6054 / $1.1982 Buy Now
DISTI # IRFD014PBF
TME Transistor: N-MOSFET, unipolar, 60V, 1.2A, 1.3W, DIP4 Min Qty: 1 1361
  • 1 $1.3060
  • 10 $0.8770
  • 50 $0.7680
  • 100 $0.6180
  • 500 $0.5540
  • 1,000 $0.5000
$0.5000 / $1.3060 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 29
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRFD014PBF

IRFD014PBF CAD Models

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IRFD014PBF Part Data Attributes

Parametric Data
IRFD014PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFD014PBF Vishay Intertechnologies Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code DIP
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 130 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 1.7 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.3 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

IRFD014PBF Related Parts

IRFD014PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFD014PBF is -55°C to 175°C.

  • Yes, the IRFD014PBF is a fast-switching MOSFET with a rise time of 10ns and a fall time of 12ns.

  • The maximum drain-source voltage rating for the IRFD014PBF is 100V.

  • Yes, the IRFD014PBF is suitable for high-frequency applications up to 1MHz due to its low gate charge and low output capacitance.

  • Yes, the IRFD014PBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other logic-level signal source.

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