| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| Samsung Semiconductor | Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | $0.5600 / $3.7128 |
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| International Rectifier | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | $0.9000 / $4.5000 |
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| Vishay Siliconix | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | $1.1100 / $2.4000 |
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| New Jersey Semiconductor Products Inc | 1.8A, 200V, 3OHM, P-CHANNEL, SI, POWER, MOSFET, TO-220AB | $1.7940 / $4.1400 |
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| Samsung Electro-Mechanics | 1.8A, 200V, 3OHM, P-CHANNEL, SI, POWER, MOSFET, TO-220AB | $2.4863 / $4.9725 |
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| Samsung Electronics Co. Ltd | IN STOCK SHIP TODAY | $1.0000 / $1.5400 |
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| Vishay Huntington | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) | MOSFET P-CH 200V 1.8A TO-220AB | $0.3658 / $0.4724 |
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| Thomson Consumer Electronics | Transistor |
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| Vishay Intertechnologies | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, |
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