Part Details for IRF9510STRLPBF by Vishay Siliconix
Results Overview of IRF9510STRLPBF by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF9510STRLPBF Information
IRF9510STRLPBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF9510STRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF9510STRLPBFCT-ND
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DigiKey | MOSFET P-CH 100V 4A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
28621 In Stock |
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$0.8237 / $1.9600 | Buy Now |
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Vyrian | Transistors | 5722 |
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RFQ |
Part Details for IRF9510STRLPBF
IRF9510STRLPBF CAD Models
IRF9510STRLPBF Part Data Attributes
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IRF9510STRLPBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF9510STRLPBF
Vishay Siliconix
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, TO-263, D2PAK-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9510STRLPBF
This table gives cross-reference parts and alternative options found for IRF9510STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9510STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF9510SPBF | Vishay Intertechnologies | $0.5517 | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF9510STRLPBF vs IRF9510SPBF |
| IRF9510STRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF9510STRLPBF vs IRF9510STRLPBF |
| IRF9510STRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF9510STRLPBF vs IRF9510STRL |
| IRF9510S | International Rectifier | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF9510STRLPBF vs IRF9510S |
IRF9510STRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF9510STRLPBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow. Additionally, operate the device within its specified voltage and current ratings.
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The recommended gate drive voltage for the IRF9510STRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRF9510STRLPBF is suitable for switching regulator applications due to its low RDS(on) and high switching speed. However, ensure that the device is operated within its specified voltage and current ratings.
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Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protective package.