| International Rectifier |
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
$14.8000 / $23.1416
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| Harris Semiconductor |
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA |
$15.7250 / $19.1250
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| Hitachi Ltd |
POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 100V, 0.35OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-204AA |
$16.0000 / $18.0000
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| Vishay Siliconix |
Transistor, |
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| TT Electronics Power and Hybrid / Semelab Limited |
11A, 100V, 0.35ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN |
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| Samsung Semiconductor |
Transistor |
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| Thomson Consumer Electronics |
Transistor |
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| TT Electronics Resistors |
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN |
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| Infineon Technologies AG |
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
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| Intersil Corporation |
12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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| Rochester Electronics LLC |
11A, 100V, 0.35ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
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