Part Details for IRF830SPBF by Vishay Siliconix
Results Overview of IRF830SPBF by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF830SPBF Information
IRF830SPBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF830SPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF830SPBF-ND
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DigiKey | MOSFET N-CH 500V 4.5A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Tube |
1072 In Stock |
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$0.9613 / $1.4200 | Buy Now |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 2250 |
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$1.1500 | Buy Now |
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Vyrian | Transistors | 336 |
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RFQ |
Part Details for IRF830SPBF
IRF830SPBF CAD Models
IRF830SPBF Part Data Attributes
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IRF830SPBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF830SPBF
Vishay Siliconix
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, TO-263, D2PAK-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF830SPBF
This table gives cross-reference parts and alternative options found for IRF830SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF830SPBF | Vishay Intertechnologies | $1.1685 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, SMD-220, D2PAK-3 | IRF830SPBF vs IRF830SPBF |
| SIHF830STRL-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | IRF830SPBF vs SIHF830STRL-GE3 |
| IRF830S | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF830SPBF vs IRF830S |
| IRF830SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | IRF830SPBF vs IRF830SPBF |
| IRF830STRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | IRF830SPBF vs IRF830STRLPBF |
| IRF830STRLPBF | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SMD-220, D2PAK-3 | IRF830SPBF vs IRF830STRLPBF |
| IRF830STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF830SPBF vs IRF830STRR |
| IRF830S | Motorola Mobility LLC | Check for Price | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF830SPBF vs IRF830S |
| IRF830STRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF830SPBF vs IRF830STRL |
IRF830SPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF830SPBF is -55°C to 175°C.
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To ensure reliability, follow the recommended derating curves for voltage and current, and ensure proper thermal management, such as using a heat sink or thermal interface material.
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The maximum SOA for the IRF830SPBF is defined by the voltage and current limits specified in the datasheet. Operating outside these limits can reduce the device's reliability and lifespan.
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To minimize EMI, use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, using shielding, and implementing EMI filters or chokes.
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The recommended gate drive voltage for the IRF830SPBF is typically between 10V and 15V, depending on the specific application and switching frequency.