Part Details for IRF830ALPBF by Vishay Intertechnologies
Results Overview of IRF830ALPBF by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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Renewable Energy
Automotive
IRF830ALPBF Information
IRF830ALPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF830ALPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF830ALPBF
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Avnet Americas | MOSFET N-CHANNEL 500V - Tape and Reel (Alt: IRF830ALPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.9047 / $0.9613 | Buy Now |
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DISTI #
844-IRF830ALPBF
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Mouser Electronics | MOSFETs N-Chan 500V 5.0 Amp RoHS: Compliant | 366 |
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$0.9610 / $1.2900 | Buy Now |
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DISTI #
E02:0323_00191871
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Arrow Electronics | Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-262 RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks Date Code: 2431 | Europe - 3000 |
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$1.0922 / $1.1479 | Buy Now |
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DISTI #
84017714
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Verical | Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-262 RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Date Code: 2431 | Americas - 3000 |
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$0.6994 / $0.7279 | Buy Now |
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DISTI #
IRF830ALPBF
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TTI | MOSFETs N-Chan 500V 5.0 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube | Americas - 0 |
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$0.9400 / $1.0000 | Buy Now |
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DISTI #
IRF830ALPBF
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TME | Transistor: N-MOSFET, unipolar, 500V, 5A, Idm: 20A, 74W, I2PAK,TO262 Min Qty: 1 | 971 |
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$0.7500 / $1.1300 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
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DISTI #
IRF830ALPBF
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IBS Electronics | IRF830AL SERIES N-CHANNEL 500 V 1.4 OHM THROUGH HOLE POWER MOSFET - TO-262 Min Qty: 1000 Package Multiple: 1 | 0 |
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$1.3650 / $1.3910 | Buy Now |
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DISTI #
IRF830ALPBF
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EBV Elektronik | MOSFET NCHANNEL 500V (Alt: IRF830ALPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 9 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRF830ALPBF
IRF830ALPBF CAD Models
IRF830ALPBF Part Data Attributes
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IRF830ALPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF830ALPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-262AA | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 74 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF830ALPBF
This table gives cross-reference parts and alternative options found for IRF830ALPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830ALPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF830AL | International Rectifier | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | IRF830ALPBF vs IRF830AL |
IRF830ALPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF830ALPBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
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The recommended gate drive voltage for the IRF830ALPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRF830ALPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper gate drive and layout to minimize ringing and oscillations.
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Handle the device with ESD-protective equipment, use an ESD-protective wrist strap, and ensure the device is stored in an ESD-protective package.