Part Details for IRF7456TRPBF-1 by Infineon Technologies AG
Results Overview of IRF7456TRPBF-1 by Infineon Technologies AG
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRF7456TRPBF-1 Information
IRF7456TRPBF-1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF7456TRPBF-1
IRF7456TRPBF-1 CAD Models
IRF7456TRPBF-1 Part Data Attributes
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IRF7456TRPBF-1
Infineon Technologies AG
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Datasheet
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IRF7456TRPBF-1
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 16 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Surface Mount | YES |
IRF7456TRPBF-1 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout for the IRF7456TRPBF-1 in their application note AN-1149. It includes guidelines for thermal pad connection, copper thickness, and PCB material selection to ensure optimal thermal performance.
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When selecting a gate driver for the IRF7456TRPBF-1, consider the driver's output current capability, voltage rating, and rise/fall time. Infineon recommends using a gate driver with a peak output current of at least 2A and a voltage rating of 12V or higher. The EiceDRIVER series from Infineon is a suitable option.
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The maximum allowed case temperature (Tc) for the IRF7456TRPBF-1 is 150°C. However, it's recommended to keep the case temperature below 125°C for reliable operation and to prevent thermal runaway.
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Yes, the IRF7456TRPBF-1 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic inductances when designing the circuit. Infineon provides guidance on high-frequency design considerations in their application note AN-1114.
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To ensure the IRF7456TRPBF-1's safe operating area (SOA) is not exceeded, monitor the device's voltage, current, and temperature during operation. Use the SOA curves provided in the datasheet to determine the maximum allowed voltage and current for a given temperature. Additionally, consider using a thermal monitoring circuit to prevent overheating.