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Part Details for IRF7342TRPBF by Infineon Technologies AG
Results Overview of IRF7342TRPBF by Infineon Technologies AG
- Distributor Offerings: (31 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7342TRPBF Information
IRF7342TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7342TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K8263
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Newark | Dual P Channel Mosfet, -55V, 3.4A, Channel Type:P Channel, Drain Source Voltage Vds N Channel:55V, Drain Source Voltage Vds P Channel:55V, Continuous Drain Current Id N Channel:3.4A, Continuous Drain Current Id P Channel:3.4A Rohs Compliant: Yes |Infineon IRF7342TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4235 |
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$0.5140 / $1.3600 | Buy Now |
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DISTI #
IRF7342PBFCT-ND
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DigiKey | MOSFET 2P-CH 55V 3.4A 8SO Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
26053 In Stock |
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$0.4572 / $1.7500 | Buy Now |
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DISTI #
IRF7342TRPBF
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Avnet Americas | Transistor MOSFET Array Dual P-CH 55V 3.4A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7342TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.3351 / $0.3584 | Buy Now |
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DISTI #
IRF7342TRPBF
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Avnet Americas | Transistor MOSFET Array Dual P-CH 55V 3.4A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7342TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.3351 / $0.3584 | Buy Now |
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DISTI #
942-IRF7342TRPBF
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Mouser Electronics | MOSFETs MOSFT DUAL PCh -55V 3.4A RoHS: Compliant | 26704 |
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$0.4600 / $1.4500 | Buy Now |
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DISTI #
E02:0323_00010761
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Arrow Electronics | Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks Date Code: 2512 | Europe - 84000 |
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$0.3924 / $0.4400 | Buy Now |
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DISTI #
E32:1076_00010761
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Arrow Electronics | Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 8 Weeks | Europe - 3000 |
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$0.4125 / $0.5855 | Buy Now |
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DISTI #
V72:2272_13889718
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Arrow Electronics | Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2417 Container: Cut Strips | Americas - 432 |
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$0.4020 / $0.7349 | Buy Now |
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DISTI #
70017508
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RS | MOSFET, Power, Dual P-Ch, VDSS -55V, RDS(ON) 0.105Ohm, ID -3.4A, SO-8,PD 2W, VGS+/-20V Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$0.9200 / $1.0800 | RFQ |
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Future Electronics | Dual P-Channel 55 V 0.17 Ohm 38 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks Container: Reel | 4000Reel |
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$0.3950 / $0.4050 | Buy Now |
Part Details for IRF7342TRPBF
IRF7342TRPBF CAD Models
IRF7342TRPBF Part Data Attributes
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IRF7342TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7342TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 114 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 3.4 A | |
| Drain-source On Resistance-Max | 0.105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 86 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 2 W | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 27 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 96 ns | |
| Turn-on Time-Max (ton) | 37 ns |
Alternate Parts for IRF7342TRPBF
This table gives cross-reference parts and alternative options found for IRF7342TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7342TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7342 | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | IRF7342TRPBF vs IRF7342 |
IRF7342TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7342TRPBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
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The recommended gate drive voltage for the IRF7342TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRF7342TRPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
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Handle the device with ESD-protective equipment, use an ESD wrist strap, and ensure the device is stored in an ESD-protective package to prevent damage.