Part Details for IPW50R140CP by Infineon Technologies AG
Results Overview of IPW50R140CP by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
IPW50R140CP Information
IPW50R140CP by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IPW50R140CP
IPW50R140CP CAD Models
IPW50R140CP Part Data Attributes
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IPW50R140CP
Infineon Technologies AG
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Datasheet
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IPW50R140CP
Infineon Technologies AG
Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247AC | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 616 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 23 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 192 W | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPW50R140CP
This table gives cross-reference parts and alternative options found for IPW50R140CP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW50R140CP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STW32NM50N | STMicroelectronics | $4.2285 | N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-247 package | IPW50R140CP vs STW32NM50N |
| IPW50R140CPFKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | IPW50R140CP vs IPW50R140CPFKSA1 |
IPW50R140CP Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPW50R140CP is -40°C to 150°C, with a junction temperature (Tj) of up to 175°C.
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To ensure reliability, it's essential to follow proper thermal management, such as using a heat sink, and to operate the device within the recommended voltage and current ratings. Additionally, consider using a gate driver with a high current capability and a low voltage drop to minimize power losses.
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The recommended gate resistance for the IPW50R140CP is between 1 ohm and 10 ohms, depending on the specific application and switching frequency. A lower gate resistance can help reduce switching losses, but may also increase the risk of oscillations.
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Yes, the IPW50R140CP can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and that the gate signals are synchronized to prevent uneven current sharing.
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The maximum allowed voltage slew rate for the IPW50R140CP is 10 V/ns. Exceeding this limit can cause the device to oscillate or fail.