-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 32A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPT015N10N5 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
68376170
|
Verical | Trans MOSFET N-CH 100V 353A 9-Pin(8+Tab) HSOF T/R Min Qty: 11 Package Multiple: 1 Date Code: 2301 | Americas - 1351 |
|
$6.0045 / $7.3370 | Buy Now |
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 32A I(D), 100V, 0.0015OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1080 |
|
$6.8415 / $13.6830 | Buy Now |
|
LCSC | 100V 300A 375W 1.5m10V150A 3.8V 1 N-channel HSOF-8 MOSFETs ROHS | 17375 |
|
$1.0574 / $1.7568 | Buy Now |
|
Win Source Electronics | Ideal for high frequency switching and sync. rec | 99999 |
|
$1.1748 / $1.5174 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IPT015N10N5
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPT015N10N5
Infineon Technologies AG
Power Field-Effect Transistor, 32A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 652 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 32 A | |
Drain-source On Resistance-Max | 0.0015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 1200 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPT015N10N5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPT015N10N5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IPT015N10N5ATMA1 | Infineon Technologies AG | $2.9878 | Power Field-Effect Transistor, 32A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8 | IPT015N10N5 vs IPT015N10N5ATMA1 |
The maximum operating temperature range for IPT015N10N5 is -40°C to 150°C.
To ensure reliability, follow the recommended PCB layout and thermal management guidelines, and ensure proper cooling and heat dissipation.
The recommended gate resistor value for IPT015N10N5 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
Yes, IPT015N10N5 is suitable for high-frequency applications up to 100 kHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current-sensing resistor, to prevent damage to the device.