Datasheets
IPT015N10N5 by: Infineon Technologies AG

Power Field-Effect Transistor, 32A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8

Part Details for IPT015N10N5 by Infineon Technologies AG

Results Overview of IPT015N10N5 by Infineon Technologies AG

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IPT015N10N5 Information

IPT015N10N5 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPT015N10N5

Part # Distributor Description Stock Price Buy
DISTI # 68376170
Verical Trans MOSFET N-CH 100V 353A 9-Pin(8+Tab) HSOF T/R Min Qty: 11 Package Multiple: 1 Date Code: 2301 Americas - 1351
  • 11 $7.3370
  • 25 $7.0218
  • 50 $6.7543
  • 100 $6.5251
  • 250 $6.3272
  • 500 $6.1550
  • 1,000 $6.0045
$6.0045 / $7.3370 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 32A I(D), 100V, 0.0015OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 1080
  • 1 $13.6830
  • 120 $7.5257
  • 267 $6.8415
$6.8415 / $13.6830 Buy Now
LCSC 100V 300A 375W 1.5m10V150A 3.8V 1 N-channel HSOF-8 MOSFETs ROHS 17375
  • 1 $1.7568
  • 10 $1.5589
  • 30 $1.2674
  • 100 $1.1405
  • 500 $1.0816
  • 1,000 $1.0574
$1.0574 / $1.7568 Buy Now
Win Source Electronics Ideal for high frequency switching and sync. rec 99999
  • 35 $1.5174
  • 75 $1.4196
  • 110 $1.3706
  • 160 $1.2727
  • 205 $1.2238
  • 260 $1.1748
$1.1748 / $1.5174 Buy Now

Part Details for IPT015N10N5

IPT015N10N5 CAD Models

IPT015N10N5 Part Data Attributes

IPT015N10N5 Infineon Technologies AG
Buy Now Datasheet
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IPT015N10N5 Infineon Technologies AG Power Field-Effect Transistor, 32A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 652 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.0015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 1200 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPT015N10N5

This table gives cross-reference parts and alternative options found for IPT015N10N5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPT015N10N5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPT015N10N5ATMA1 Infineon Technologies AG $2.9878 Power Field-Effect Transistor, 32A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8 IPT015N10N5 vs IPT015N10N5ATMA1

IPT015N10N5 Related Parts

IPT015N10N5 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IPT015N10N5 is -40°C to 150°C.

  • To ensure reliability, follow the recommended PCB layout and thermal management guidelines, and ensure proper cooling and heat dissipation.

  • The recommended gate resistor value for IPT015N10N5 is between 10Ω to 100Ω, depending on the specific application and switching frequency.

  • Yes, IPT015N10N5 is suitable for high-frequency applications up to 100 kHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.

  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current-sensing resistor, to prevent damage to the device.

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