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Part Details for IPD530N15N3GATMA1 by Infineon Technologies AG
Results Overview of IPD530N15N3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPD530N15N3GATMA1 Information
IPD530N15N3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD530N15N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79X1437
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Newark | Mosfet, N-Ch, 150V, 21A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:21A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPD530N15N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 419 |
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$0.4770 | Buy Now |
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DISTI #
86AK5220
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Newark | Mosfet, N-Ch, 150V, 21A, To-252 Rohs Compliant: Yes |Infineon IPD530N15N3GATMA1 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.5620 / $0.5710 | Buy Now |
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DISTI #
IPD530N15N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 150V 21A TO252-3 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
2304 In Stock |
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$0.5233 / $1.4000 | Buy Now |
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DISTI #
79X1437
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Avnet Americas | MV POWER MOS - Product that comes on tape, but is not reeled (Alt: 79X1437) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Ammo Pack | 419 Partner Stock |
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$0.7470 / $1.4400 | Buy Now |
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DISTI #
IPD530N15N3GATMA1
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Avnet Americas | MV POWER MOS - Tape and Reel (Alt: IPD530N15N3GATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.3828 / $0.4095 | Buy Now |
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DISTI #
726-IPD530N15N3GATMA
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Mouser Electronics | MOSFETs TRENCH >=100V RoHS: Compliant | 20047 |
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$0.5340 / $1.2900 | Buy Now |
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DISTI #
V72:2272_13979485
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Arrow Electronics | Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2324 Container: Cut Strips | Americas - 326 |
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$0.4547 / $0.7388 | Buy Now |
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DISTI #
87250252
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Verical | Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2442 | Americas - 1920000 |
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$0.5382 | Buy Now |
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DISTI #
87218650
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Verical | Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) DPAK T/R Min Qty: 442 Package Multiple: 1 Date Code: 2301 | Americas - 2686 |
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$0.5266 / $0.8494 | Buy Now |
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DISTI #
69266938
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Verical | Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) DPAK T/R Min Qty: 54 Package Multiple: 1 Date Code: 2238 | Americas - 2140 |
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$0.2710 / $0.4410 | Buy Now |
Part Details for IPD530N15N3GATMA1
IPD530N15N3GATMA1 CAD Models
IPD530N15N3GATMA1 Part Data Attributes
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IPD530N15N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD530N15N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 5 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.053 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 84 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD530N15N3GATMA1
This table gives cross-reference parts and alternative options found for IPD530N15N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD530N15N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB530N15N3GATMA1 | Infineon Technologies AG | $0.5327 | Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPD530N15N3GATMA1 vs IPB530N15N3GATMA1 |
| BSC520N15NS3GATMA1 | Infineon Technologies AG | $0.6829 | Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | IPD530N15N3GATMA1 vs BSC520N15NS3GATMA1 |
| BSZ520N15NS3GATMA1 | Infineon Technologies AG | $0.8237 | Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | IPD530N15N3GATMA1 vs BSZ520N15NS3GATMA1 |
IPD530N15N3GATMA1 Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for IPD530N15N3GATMA1 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
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Proper cooling is crucial for the device's reliability. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) to fill any gaps. A heat sink with a thermal resistance of 1-2°C/W is recommended.
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The recommended gate resistor value for IPD530N15N3GATMA1 is between 10Ω and 22Ω. However, the optimal value depends on the specific application and switching frequency. Consult the application note or contact Infineon support for more information.
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Yes, IPD530N15N3GATMA1 is suitable for high-reliability applications. It's built with Infineon's proprietary trench stop technology, which ensures high reliability and ruggedness. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specifications.
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To protect the device from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. Ensure the device is operated within its specified voltage and current ratings. Additionally, consider using a TVS (transient voltage suppressor) diode to protect against voltage spikes.